BSC010NE2LSIATMA1 vs BSC014N04LSIATMA1 Comparison

Detailed side-by-side comparison of BSC010NE2LSIATMA1 by Infineon and BSC014N04LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon

BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon

BSC010NE2LSIATMA1 βœ“ Active
Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 βœ“ Active

Specification Comparison

Parameter BSC010NE2LSIATMA1 BSC014N04LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.39
Manufacturer Infineon Technologies β€”
Series / Family OptiMOS 25V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 25 V 40 V
Continuous Drain Current (ID) at TA 38 A β€”
Continuous Drain Current (ID) at TC 100 A β€”
Power Dissipation (PD) at TA 2.5 W β€”
Power Dissipation (PD) at TC 96 W β€”
Package PG-TDSON-8-7 (TDSON-8 EP) PG-TDSON-8 FL (TDSON-8 with exposed drain pad)
Mounting Type Surface Mount Surface Mount
Configuration Single N-Channel β€”
Technology OptiMOS (Trench) OptiMOS 5 (trench, thin-wafer)
Operating Temperature Range -55C to +150C (TJ) -55 C to +150 C
Pin Count 8 β€”
RoHS Status Compliant Compliant
Gate Drive Logic-level compatible β€”
MSL Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] β€”
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] β€”
Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
FET Type β€” N-Channel
Continuous Drain Current (ID, Tc) β€” 100 A
Continuous Drain Current (ID, Ta) β€” 31 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed IDM rating]
RDS(on) max at VGS=10 V β€” 1.4 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS absolute maximum]
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc) β€” 96 W
Power Dissipation (PD, Ta) β€” 2.5 W
Tradename β€” OptiMOS

Datasheets & Resources

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