BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
MPN: BSC014N04LSIATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.89 | $0.89 |
| 10 | $0.74 | $7.40 |
| 100 | $0.59 | $59.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.39 | $390.00 |
BSC014N04LSIATMA1 Overview
An N-channel MOSFET is a voltage-controlled semiconductor switch in which majority carriers are electrons flowing through an n-type channel; turning the gate on allows current to flow from drain to source, while turning the gate off blocks it. The OptiMOS 5 platform is the current-generation Infineon trench MOSFET family for sub-100 V applications, sitting within the broader taxonomy of power MOSFETs -> discrete semiconductors -> power management switches. This part belongs to the synchronous-rectifier and OR-ing sub-categories where low RDS(on) and small gate charge directly translate into higher system efficiency.
Key features include a 1.4 mOhm max RDS(on) at VGS=10 V, 96 W continuous power dissipation at Tc, and an exposed-drain pad (FL) for direct thermal coupling to the PCB copper. The TDSON-8 FL footprint is footprint-compatible with industry-standard 5x6 mm Power-SO8/SO-8FL land patterns, simplifying second-source sourcing. Typical gate charge and Miller charge values are optimized for hard-switched and soft-switched topologies operating in the 100 kHz to 1 MHz range, and the part is rated for operation across industrial temperature grades. Infineon claims roughly 15% lower RDS(on) and 31% lower figure of merit compared with prior-generation alternatives at the same silicon area.
The architecture uses a shielded-gate trench cell that minimizes Miller capacitance and gate charge while preserving a high inrush SOA. Compared with planar MOSFETs of equivalent RDS(on), the part typically delivers faster switching edges and lower output charge (Qoss), which reduces resonant-tank circulating losses in LLC and totem-pole PFC stages. The thin-wafer approach also lowers the thermal resistance from junction to case, supporting the 96 W rating on a moderately sized PCB copper pad.
Typical applications include synchronous rectification in 12 V SMPS for server, telecom, and datacom rails, OR-ing FETs in redundant power architectures, motor-drive low-side switches in 24 V industrial systems, and high-current USB-PD / e-fuse paths. The combination of low RDS(on), small package, and high pulsed-current capability also makes it attractive for battery-protection and hot-swap circuits in 1- to 4-cell Li-ion packs. Designers using this part should follow Infineon's TDSON PCB layout guideline: stitch multiple thermal vias under the exposed pad, use wide copper planes on source, and keep the gate-loop loop area minimal to control switching ringing.
Drop-in alternatives for BSC014N04LSIATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC014N04LSIATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, MSL Level, Continuous Drain Current (ID) at Ta.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC014N04LSATMA1
✅ Drop-In✓ In Stock
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View Datasheet →BSC016N04LSGATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC022N04LS6ATMA1
✅ Drop-In✓ In Stock
$0.66 / Unit
View Datasheet →NTMFS4C013N
✅ Drop-In📋 Reference alternative (not in catalog)
SiRA60DP
✅ Drop-In📋 Reference alternative (not in catalog)
BSC014N04LSIATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench, thin-wafer) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A |
| Continuous Drain Current (ID, Ta) | 31 A |
| RDS(on) max at VGS=10 V | 1.4 mOhm |
| Power Dissipation (PD, Tc) | 96 W |
| Power Dissipation (PD, Ta) | 2.5 W |
| Operating Temperature Range | -55 C to +150 C |
| Package | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Tradename | OptiMOS |
BSC014N04LSIATMA1 Pin Configuration
| Pin 1 | Source — Source (pin 1 of 8) |
| Pin 2 | Source — Source |
| Pin 3 | Source — Source |
| Pin 4 | Gate — Gate |
| Pin 5 | Drain — Drain |
| Pin 6 | Drain — Drain |
| Pin 7 | Drain — Drain |
| Pin 8 | Drain — Drain |
Typical Applications
BSC014N04LSIATMA1 is suitable for 6 applications: 12 V Synchronous Rectification in SMPS, OR-ing FET in Redundant Power Architectures, 24 V Industrial Motor-Drive Low-Side Switch, USB-PD and High-Current Hot-Swap / e-Fuse, 1- to 4-Cell Li-Ion Battery Protection FET, Telecom / Server 12 V Point-of-Load Stage.
12 V Synchronous Rectification in SMPS
The BSC014N04LSIATMA1's 40 V VDS, 1.4 mOhm max RDS(on), and low Qg make it a strong choice for the synchronous-rectifier FET in 12 V SMPS, including buck, half-bridge, and full-bridge topologies. With 96 W power handling on the case and 100 A continuous drain current at Tc, it carries the full load of high-current server, telecom, and datacom rails while keeping conduction loss low. The exposed drain pad allows direct thermal coupling to a 1+ oz inner-plane copper pour with thermal vias, sustaining 60-80 A real loads on a 4-layer board. Compared with a Schottky diode, the synchronous stage recovers 5-8 percent system efficiency at full load, which directly translates into lower heatsink cost and higher power density.
Recommended
OR-ing FET in Redundant Power Architectures
In N+1 redundant 12 V power shelves, the BSC014N04LSIATMA1 functions as an OR-ing switch between a power module and the shared load bus. Its 1.4 mOhm RDS(on) keeps conduction loss under 7 W at 70 A continuous, well within the thermal envelope of the TDSON-8 FL package on a 2-oz copper pad. The fast turn-off capability of OptiMOS 5 minimizes reverse-current let-through during fault isolation, protecting upstream converters from back-feed. The PG-TDSON-8 FL footprint is footprint-compatible with industry-standard Power-SO8 parts, simplifying second sourcing.
Recommended
24 V Industrial Motor-Drive Low-Side Switch
The BSC014N04LSIATMA1 acts as the low-side switch in 24 V brushless-DC and stepper-driver half-bridges for industrial automation. The 40 V VDS rating provides 60 percent headroom over a 24 V nominal bus, tolerating load-dump transients without avalanche. Its 100 A pulsed-current capability supports motor in-rush and stall-current events, while the small TDSON footprint allows compact multi-axis driver layouts. The exposed drain pad ties directly to a copper heatsink plane, sustaining continuous 30-40 A switching with no airflow.
Recommended
USB-PD and High-Current Hot-Swap / e-Fuse
The BSC014N04LSIATMA1 is well suited to USB-Power-Delivery and e-fuse roles that demand high inrush and low conduction loss. In a 20 V / 5 A Type-C port, the 40 V VDS rating covers PD's 20 V negotiated bus, and the 1.4 mOhm RDS(on) holds full-load dissipation under 0.5 W. The fast body-diode reverse recovery of OptiMOS 5 limits ringing during hot-insertion events, improving EMI margin and reducing the need for snubbers. The TDSON-8 FL land pattern fits inside a Type-C connector keep-out.
Recommended
1- to 4-Cell Li-Ion Battery Protection FET
The BSC014N04LSIATMA1 can be paired back-to-back as the protection switch in 1- to 4-cell Li-ion battery packs. The 40 V VDS rating easily handles the 16.8 V maximum charge voltage of a 4S pack, and the 1.4 mOhm RDS(on) on each side keeps total discharge-path resistance under 3 mOhm. The TDSON-8 FL package accommodates two dice on a small footprint, saving PCB space in pack designs. The part's industrial temperature grade supports -40 C to +85 C operation typical of consumer and light-industrial packs.
Recommended
Telecom / Server 12 V Point-of-Load Stage
In 48 V-to-12 V intermediate-bus converters feeding downstream POL regulators, the BSC014N04LSIATMA1 can serve as the secondary-side synchronous rectifier in isolated topologies like half-bridge and full-bridge converters. The 40 V VDS comfortably covers the 12 V rail plus reflected-reset transients, and the 1.4 mOhm RDS(on) combined with low Qg keeps peak efficiency above 96 percent at 200-300 kHz switching. The exposed drain pad enables direct heatsink attachment or copper-pour cooling on densely packed server boards.
Recommended
Recommended Products Summary
Engineering reference data for BSC014N04LSIATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC014N04LSATMA1 | BSC016N04LSGATMA1 | BSC022N04LS6ATMA1 | NTMFS4C013N | SiRA60DP |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | SO-8FL / Power-SO8 (5x6 mm) - same land pattern | PowerPAK SO-8 (5x6 mm) - same land pattern |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 1.4 mOhm | 1.4 mOhm | 1.6 mOhm | 2.2 mOhm | 1.3 mOhm | 1.5 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi trench | Vishay TrenchFET |
Key Differentiators
- Industry-leading RDS(on) x Qg figure of merit (vs BSC026N04LSATMA1)
- Lower RDS(on) than cross-brand Power-SO8 alternatives (vs SiRA60DP)
- Industrial temperature grade in the same family (vs BSC014N04LSATMA1)
Design Notes
Estimated: at continuous 60 A with RDS(on) = 1.4 mOhm (after Tj rise derate to ~1.7 mOhm at 100 C), conduction loss is roughly 6 W. On a 4-layer 1-oz inner copper pad with 12 thermal vias (0.3 mm drill, 1 oz plating), RthJA drops to ~30-40 C/W; this yields a Tj rise of 180-240 C above 25 C ambient, exceeding the 150 C rating. Reduce continuous load to 35-45 A or attach a small heatsink to the drain pad. Always derate against the manufacturer's RthJC and copper-pad recommendation rather than the datasheet Ta=25 C number.
Use a wide, uninterrupted source copper pour on the top layer to minimize common-source inductance, which otherwise couples di/dt into the gate loop and causes ringing/miller-induced shoot-through. Place the gate-driver within 5 mm of the gate pin and use a 10 ohm gate resistor to control edge rates. Stitch the exposed drain pad with an array of thermal vias (12-20 vias, 0.3 mm finished) connecting to a 2 oz inner copper plane; this provides both thermal relief and a low-impedance return for switching currents.
Do not drive the gate above the absolute-maximum VGS rating (typically +/-20 V for OptiMOS 5) without a gate-source Zener or TVS clamp - ringing from the gate-drive loop can otherwise punch through the oxide. Ensure VDS stays below the 40 V rating during turn-off spikes; a 50 V TVS or RC snubber across the drain-source is recommended when driving highly inductive loads. Confirm pulsed drain current (IDM) rating for inrush events before relying on the 100 A Tc continuous figure for short-duration peaks.
For switching frequencies above 200 kHz, the gate-loop parasitic resonance can excite miller-induced turn-on of the complementary FET in a half-bridge. Mitigate this by adding a 4.7 kohm gate-to-source resistor on each FET (placed close to the gate pin) and using a gate-drive supply that is well bypassed at the IC. For very high dV/dt applications, consider a Ferrite bead in series with the gate to damp the resonance without slowing switching too much.
Compliance Information
RoHS and halogen-free per Infineon product page. Industrial temperature grade (-55 C to +150 C). Not AEC-Q100 qualified; for automotive, contact Infineon about the equivalent automotive OptiMOS 5 part.
