BSC011N03LSIATMA1 vs BSC059N04LS6ATMA1 Comparison
Detailed side-by-side comparison of BSC011N03LSIATMA1 by Infineon and BSC059N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΞ© Power MOSFET | Infineon
BSC011N03LSIATMA1 β ActiveInfineon
BSC059N04LS6ATMA1
BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon
BSC059N04LS6ATMA1 β ActiveSpecification Comparison
| Parameter | BSC011N03LSIATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.74 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’ 30 V | β |
| Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 37 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | β |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΞ© (typical) | β |
| Power Dissipation at TA=25Β°C | 2.5 W | β |
| Power Dissipation at TC=25Β°C | 96 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TDSON-8-7 (Surface Mount) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Technology | β | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25C | β | 17 A |
| Continuous Drain Current (ID) at TC=25C | β | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | β | 59 A |
| On-Resistance RDS(on) max | β | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | β | 3 W |
| Total Power Dissipation at TC=25C | β | 38 W |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Operating Temperature Range | β | -55C to +150C |
| Diode Continuous Forward Current (IS) | β | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | β | 236 A at TC=25C |
| Lead-Free | β | Yes |