BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
MPN: BSC011N03LSIATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.65 | $26.50 |
| 100 | $2.2 | $220.00 |
| 500 | $1.85 | $925.00 |
| 1,000 | $1.55 | $1,550.00 |
| 3,000 | $1.32 | $3,960.00 |
BSC011N03LSIATMA1 Overview
An OptiMOS power MOSFET is a trench-technology N-channel enhancement-mode MOSFET optimized for low-voltage (typically ≤100 V) synchronous rectification, DC-DC conversion, and hot-swap applications. As a member of Infineon's OptiMOS 30 V family, the BSC011N03LSI sits within the broader power MOSFET hypernym hierarchy of discrete semiconductors, and is engineered for highest power density and energy efficiency at the lowest specific on-resistance.
Key specifications include 30 V VDS, ±20 V VGS, an integrated Schottky-like monolithically optimized body diode, and an operating junction temperature range of -55 °C to +150 °C. The PG-TDSON-8-7 package provides an exposed drain pad (pin 5-8) for low thermal resistance, enabling efficient heat extraction in space-constrained designs. The part is fully RoHS compliant and qualified to JEDEC standards for moisture sensitivity level 1.
The OptiMOS 30V cell uses an advanced trench gate structure that minimizes both on-state resistance (RDS(on)) and gate charge (Qg). The low figure-of-merit (FOM = RDS(on) × Qg) translates directly into reduced switching and conduction losses in high-frequency SMPS, where every milliohm of RDS(on) saved improves efficiency by measurable percentage points at high load.
Typical applications include synchronous rectification in 12 V buck and POL converters, hot-swap and OR-ing circuits in server/telecom power systems, battery protection and load switching in 1-3S lithium-ion packs, and motor drive low-side switches in industrial BLDC/robotic systems.
When designing with the BSC011N03LSIATMA1, ensure VGS is driven to at least 10 V for full enhancement. The exposed drain pad must be soldered to a sufficiently large copper pour (recommended ≥100 mm² on a 4-layer board) to keep junction temperature below 150 °C under worst-case load.
This page synthesizes distributor pricing, drop-in same-brand alternatives, thermal design guidance, and pinout information not consolidated in the manufacturer datasheet, optimized for engineers selecting 30 V power MOSFETs for DC-DC and hot-swap designs.
Drop-in alternatives for BSC011N03LSIATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC011N03LSIATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Junction Temperature, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC014N06NSATMA1
✅ Drop-In✓ In Stock
$0.89 / Unit
View Datasheet →BSC0504NSIATMA1
✅ Drop-In✓ In Stock
Contact for price
View Datasheet →BSC027N04LSGATMA1
✅ Drop-In✓ In Stock
$0.54 / Unit
View Datasheet →BSC059N04LS6ATMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →BSC039N06NSATMA1
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →BSZ060NE2LSATMA1
✅ Drop-In✓ In Stock
$0.27 / Unit
View Datasheet →BSC011N03LSIATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS™ 30 V |
| Channel Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 30 V |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | 37 A |
| Continuous Drain Current (ID) at TC=25°C | 100 A |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΩ (typical) |
| Power Dissipation at TA=25°C | 2.5 W |
| Power Dissipation at TC=25°C | 96 W |
| Operating Junction Temperature | -55 °C to +150 °C |
| Package | PG-TDSON-8-7 (Surface Mount) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
BSC011N03LSIATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input (VGS) |
| Pin 2 | SOURCE — Source connection |
| Pin 3 | SOURCE — Source connection |
| Pin 4 | SOURCE — Source connection |
| Pin 5 | DRAIN — Drain connection (exposed pad start) |
| Pin 6 | DRAIN — Drain connection |
| Pin 7 | DRAIN — Drain connection |
| Pin 8 | DRAIN — Drain connection (exposed pad end) |
Safe Operating Area - DC
Typical Applications
BSC011N03LSIATMA1 is suitable for 6 applications: Synchronous Rectification in 12V Buck Converters, Hot-Swap and OR-ing in Telecom/Server Power, Battery Protection and Load Switching in Li-ion Packs, BLDC Motor Low-Side Switch in Robotics, USB-PD and High-Current Type-C Power Paths, E-Fuse and Circuit Protection in Industrial Systems.
Synchronous Rectification in 12V Buck Converters
The BSC011N03LSIATMA1's 1.1 mΩ RDS(on) at 10 V VGS and 30 V VDS rating make it ideal for synchronous rectification in 12 V input buck converters. The exposed-drain PG-TDSON-8-7 pad enables direct heat extraction into the PCB copper, allowing continuous operation at 30-50 A in compact POL converter footprints. The OptiMOS trench structure minimizes body-diode reverse-recovery charge, which reduces dead-time losses in CCM operation and improves light-load efficiency. Compared with discrete Schottky rectifiers, this MOSFET typically yields 2-4% efficiency improvement at full load and significantly better thermal performance at high switching frequencies (300-500 kHz).
Recommended
Hot-Swap and OR-ing in Telecom/Server Power
The BSC011N03LSIATMA1's 30 V VDS rating and 1.1 mΩ RDS(on) suit 12 V hot-swap and OR-ing applications in telecom and server power systems. As a load switch, its PG-TDSON-8-7 package handles the inrush current of capacitive loads while the exposed pad dissipates the I²R heat into the PCB. In OR-ing configurations, the low forward drop reduces power dissipation versus Schottky diodes by 60-80% at 20 A load, and the integrated body diode handles reverse-current blocking during source transitions. Engineers typically add a gate pull-down resistor and TVS for transient protection on the 12 V bus.
Recommended
Battery Protection and Load Switching in Li-ion Packs
The BSC011N03LSIATMA1 enables ultra-low-loss battery protection and load switching in 1S-3S lithium-ion battery packs. Its 30 V VDS comfortably exceeds the maximum 12.6 V of a fully charged 3S pack, while the 1.1 mΩ RDS(on) minimizes voltage drop and heat generation during high-current discharge (e.g., power tools, e-bikes, e-cigarettes). The 100 A continuous rating at TC=25°C supports short-duration peak loads of battery management systems. The PG-TDSON-8-7 package is small enough for inline pack assembly, and its exposed pad allows direct soldering to inner copper layers for maximum heat extraction.
Recommended
BLDC Motor Low-Side Switch in Robotics
In BLDC and stepper motor drive low-side switches for industrial robotics, the BSC011N03LSIATMA1 provides the current handling and switching speed required for PWM frequencies of 20-50 kHz. Its 30 V VDS suits 24 V nominal bus rails, and the 1.1 mΩ RDS(on) keeps conduction losses low at 10-20 A phase currents. The exposed-drain pad on PG-TDSON-8-7 allows direct mounting to the motor driver PCB with thermal vias for heat extraction, eliminating the need for an external heatsink in compact robotic joint designs. The -55 °C to +150 °C operating range supports both indoor and outdoor industrial environments.
Recommended
USB-PD and High-Current Type-C Power Paths
The BSC011N03LSIATMA1's 1.1 mΩ RDS(on) and 30 V VDS rating make it an efficient load switch for USB-PD and Type-C power paths delivering up to 100 W (20 V, 5 A). In a typical application, the MOSFET is placed between the Type-C VBUS rail and the downstream buck converter, providing reverse-current blocking, inrush control, and OVP protection. Its PG-TDSON-8-7 package allows integration into compact Type-C dongles and hubs. The low RDS(on) ensures the voltage drop at 5 A is under 10 mV, preserving tight USB-PD voltage tolerances without exceeding cable ampacity ratings.
Recommended
E-Fuse and Circuit Protection in Industrial Systems
The BSC011N03LSIATMA1 functions as the main pass element in electronic fuse (e-fuse) designs for 24 V industrial systems, where its 30 V VDS rating provides margin for inductive transients and its 100 A pulsed current rating handles inrush events. Its 1.1 mΩ RDS(on) minimizes steady-state power dissipation compared with traditional PTC fuses or larger N-channel MOSFETs, allowing continuous operation at 20-30 A in DIN-rail mounted protection modules. The PG-TDSON-8-7 footprint supports compact e-fuse PCB designs and the exposed pad aids thermal dissipation during fault clearing. Infineon's OptiMOS technology provides robust avalanche energy capability for repetitive fault events.
Recommended
Recommended Products Summary
Engineering reference data for BSC011N03LSIATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC014N06NSATMA1 | BSC0504NSIATMA1 | BSC027N04LSGATMA1 | BSC059N04LS6ATMA1 | BSC039N06NSATMA1 | BSZ060NE2LSATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-7 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TSDSON-8 - same family |
| Drain-to-Source Voltage (VDS) | 30 V | 60 V | 30 V | 40 V | 40 V | 60 V | 25 V |
| On-State Resistance RDS(on) at 10V VGS | 1.1 mΩ | 1.4 mΩ | 5.0 mΩ | 2.7 mΩ | 5.9 mΩ | 3.9 mΩ | 6.0 mΩ |
| Operating Junction Temperature | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
| Product Family | OptiMOS 30V | OptiMOS 60V | OptiMOS 30V | OptiMOS 40V | OptiMOS 40V | OptiMOS 60V | OptiMOS 25V |
Key Differentiators
- Ultra-low RDS(on) of 1.1 mΩ in PG-TDSON-8-7 (vs BSC027N04LSGATMA1)
- 30 V VDS class - lowest in PG-TDSON-8 OptiMOS family (vs BSC014N06NSATMA1 (60 V VDS))
- High continuous current rating 100 A at TC=25°C (vs BSC0504NSIATMA1)
Design Notes
Estimated: At continuous ID = 37 A and RDS(on) = 1.1 mΩ, conduction loss is approximately 1.5 W. Mounting the PG-TDSON-8-7 with ≥100 mm² of 2 oz copper on a 4-layer board reduces thermal resistance to roughly 40 °C/W, supporting 1.5 W dissipation at 60 °C temperature rise. For 96 W dissipation at TC=25°C, the die junction-to-case thermal resistance (RθJC) is the limiting factor. Always solder the exposed drain pad (pins 5-8) to maximize heat extraction.
Place the gate drive trace directly between the gate pin (pin 1) and the driver IC output with minimal length to limit parasitic inductance. Use a 10 Ω gate resistor to dampen ringing and a 100 kΩ pull-down on the gate to prevent unwanted turn-on during power-up. Source pins (2-4) should be connected to a wide copper pour and Kelvin-connected to the gate driver return for clean gate drive. Thermal vias (≥9 vias of 0.3 mm diameter) under the exposed drain pad are essential for high-current operation.
Do not exceed VGS = ±20 V absolute maximum, even momentarily. Always apply VGS ≥ 10 V for full enhancement and lowest RDS(on). For 12 V applications, a 12 V gate drive is acceptable. Body diode reverse recovery can cause voltage transients in synchronous rectification - verify dead-time control in the controller. Do not use the part above its VDS rating during inductive switching transients; add a TVS or snubber for protection in motor drive and hot-swap applications.
Keep the high-current loop (input cap → drain → source → input cap return) as small as possible to minimize parasitic inductance and voltage overshoot during switching. Place input decoupling ceramic capacitors (≥10 µF X7R) within 5 mm of the drain pad. For multi-MOSFET parallel operation, use a symmetric layout with matched gate drive paths and individual gate resistors to ensure balanced current sharing. Avoid routing sensitive analog signals over the switching node.
Compliance Information
RoHS and REACH compliant per Infineon product datasheet. MSL 1 rated per JEDEC J-STD-020. Not AEC-Q100 qualified (industrial/commercial grade).
