BSC011N03LSIATMA1 vs BSZ060NE2LSATMA1 Comparison

Detailed side-by-side comparison of BSC011N03LSIATMA1 by Infineon and BSZ060NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ060NE2LSATMA1

BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon

BSZ060NE2LSATMA1 ✓ Active

Specification Comparison

Parameter BSC011N03LSIATMA1 BSZ060NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.32 $0.27
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 30 V
Channel Type N-Channel
Drain-to-Source Voltage (VDS) 30 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA=25°C 37 A
Continuous Drain Current (ID) at TC=25°C 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] 44 A
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical)
Power Dissipation at TA=25°C 2.5 W
Power Dissipation at TC=25°C 96 W
Operating Junction Temperature -55 °C to +150 °C
Package PG-TDSON-8-7 (Surface Mount) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Part Number BSZ060NE2LSATMA1
Technology OptiMOS™ (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 25 V
Continuous Drain Current (ID) @ Ta=25C 12 A
Continuous Drain Current (ID) @ Tc=25C 44 A
On-Resistance RDS(on) max @ VGS=10V 6 mOhm
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) @ VGS=4.5V]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical]
Power Dissipation (Ta) 2.1 W
Power Dissipation (Tc) 26 W
Operating Temperature Range -55C to +150C
Shipping Packaging Tape & Reel

Datasheets & Resources

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