BSC014N04LS vs BSC014N04LSIATMA1 Comparison

Detailed side-by-side comparison of BSC014N04LS by Infineon and BSC014N04LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSIATMA1

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N04LS BSC014N04LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.35 $0.39
Polarity N-channel β€”
Technology OptiMOS 5 OptiMOS 5 (trench, thin-wafer)
VDS Max 40 V β€”
RDS(on) Max 1.4 mOhm β€”
ID Max 198 A β€”
Package SuperSO8 5x6 (TDSON-8FL) PG-TDSON-8 FL (TDSON-8 with exposed drain pad)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C β€”
Configuration Single MOSFET β€”
Absolute Max Rating Condition TC = 25C, de-rating required above β€”
Thermal Test Condition 40 mm x 40 mm x 1.5 mm FR4, 6 cm2 70 um copper drain area β€”
RoHS Status [DATA_NEEDED: RoHS status] Compliant
VGS Max [DATA_NEEDED: gate-source voltage max] β€”
Total Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
Power Dissipation [DATA_NEEDED: power dissipation] β€”
Thermal Resistance RthJC [DATA_NEEDED: thermal resistance] β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, Tc) β€” 100 A
Continuous Drain Current (ID, Ta) β€” 31 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed IDM rating]
RDS(on) max at VGS=10 V β€” 1.4 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS absolute maximum]
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc) β€” 96 W
Power Dissipation (PD, Ta) β€” 2.5 W
Operating Temperature Range β€” -55 C to +150 C
MSL Level β€” 1 (per JEDEC J-STD-020)
Tradename β€” OptiMOS

Datasheets & Resources

Browse All Products Create BOM Request Quote