BSC014N04LSATMA1 vs BSC014N04LSIATMA1 Comparison

Detailed side-by-side comparison of BSC014N04LSATMA1 by Infineon and BSC014N04LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSATMA1

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active
Infineon
BSC014N04LSIATMA1

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N04LSATMA1 BSC014N04LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $0.39
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Ta 32 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
RDS(on) max at VGS=10 V 1.4 mOhm 1.4 mOhm
Power Dissipation at Ta 2.5 W β€”
Power Dissipation at Tc 96 W β€”
Gate-Source Voltage (VGS) max 20 V [DATA_NEEDED: VGS absolute maximum]
Operating Temperature Range -55C to +175C -55 C to +150 C
Package SuperSO8 (TDSON-8 FL) 5x6 mm PG-TDSON-8 FL (TDSON-8 with exposed drain pad)
Mounting Type Surface Mount Surface Mount
Technology Trench (OptiMOS 5, thin-wafer) OptiMOS 5 (trench, thin-wafer)
RoHS Status Compliant Compliant
MSL Level 1 (unlimited) 1 (per JEDEC J-STD-020)
FET Type β€” N-Channel
Continuous Drain Current (ID, Tc) β€” 100 A
Continuous Drain Current (ID, Ta) β€” 31 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed IDM rating]
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc) β€” 96 W
Power Dissipation (PD, Ta) β€” 2.5 W
Tradename β€” OptiMOS

Datasheets & Resources

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