BSC014N04LSATMA1 vs BSC014N04LSTATMA1 Comparison

Detailed side-by-side comparison of BSC014N04LSATMA1 by Infineon and BSC014N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSATMA1

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active
Infineon
BSC014N04LSTATMA1

BSC014N04LSTATMA1 - 40V 1.4mΞ© OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N04LSATMA1 BSC014N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Ta 32 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
RDS(on) max at VGS=10 V 1.4 mOhm β€”
Power Dissipation at Ta 2.5 W β€”
Power Dissipation at Tc 96 W β€”
Gate-Source Voltage (VGS) max 20 V β€”
Operating Temperature Range -55C to +175C -55Β°C to +150Β°C
Package SuperSO8 (TDSON-8 FL) 5x6 mm PG-TDSON-8 FL (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Technology Trench (OptiMOS 5, thin-wafer) OptiMOS 5 (N-Channel Trench)
RoHS Status Compliant Compliant
MSL Level 1 (unlimited) MSL1
Part Number β€” BSC014N04LSTATMA1
Gate-Source Voltage (VGS) β€” Β±20 V
Continuous Drain Current (ID) @ TA=25Β°C β€” 33 A
Continuous Drain Current (ID) @ TC=25Β°C β€” 100 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance R DS(on) max @ VGS=10V β€” 1.45 mΞ©
R DS(on) typical @ VGS=10V β€” [DATA_NEEDED: RDS(on) typical]
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 115 W
Pin Count β€” 8
Lead-Free β€” Yes

Datasheets & Resources

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