BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon
MPN: BSC014N04LSTATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.91 | $0.91 |
| 10 | $0.78 | $7.80 |
| 100 | $0.66 | $66.00 |
| 500 | $0.58 | $290.00 |
| 1,000 | $0.49 | $490.00 |
| 5,000 | $0.41 | $2,050.00 |
BSC014N04LSTATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that uses an electric field to modulate the conductivity of a semiconductor channel. N-channel MOSFETs such as this part are the dominant building blocks of synchronous buck converters, half-bridge stages, and hot-swap controllers because their low R DS(on) minimizes conduction loss. The OptiMOS 5 process family represents Infineon's fifth-generation trench MOSFET technology, positioned within the broader power semiconductor hierarchy: MOSFET → power transistor → discrete semiconductor → power management.
Key features include the SuperSO8 5x6 package that delivers 1.45 mΩ max R DS(on) at VGS=10 V with enhanced thermal rating, integrated Schottky-like body diode characteristics, and a thermally efficient exposed pad (PG-TDSON-8 FL) footprint. The die is optimized for switching frequencies from 100 kHz to 1 MHz, balancing gate charge and output capacitance for fast turn-on/turn-off transitions. Compared to the previous OptiMOS 3 generation, OptiMOS 5 reduces R DS(on) by approximately 30 percent at equivalent die size, allowing either smaller magnetics or higher efficiency at the same footprint.
Typical applications include 12 V-24 V synchronous buck converters in telecom and server VRMs, OR-ing and hot-swap circuits in 48 V distributed-power architectures, motor drive half-bridges in eMobility tools and light electric vehicles, and USB-PD / e-marked cable protection switches. The low R DS(on) makes it particularly attractive for high-current, low-voltage power paths where conduction loss dominates the efficiency budget.
When designing with this device, calculate both conduction loss (I² × R DS(on)) and switching loss (½ × VDS × ID × (tr + tf) × fSW) to ensure the total dissipation stays below the derated continuous rating. The exposed thermal pad must be soldered to a copper pour of at least 1 square inch to achieve the rated 1.5°C/W RthJC thermal performance.
Drop-in alternatives for BSC014N04LSTATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC014N04LSTATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Drain-Source Voltage (VDS), Technology, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC014N04LSATMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →BSC018N04LSGATMA1
✅ Drop-In✓ In Stock
$0.52 / Unit
View Datasheet →BSC034N06NSATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →BSZ017NE2LS5IATMA1
✅ Drop-In✓ In Stock
$0.64 / Unit
View Datasheet →BSC014N04LSTATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC014N04LSTATMA1 |
| Technology | OptiMOS 5 (N-Channel Trench) |
| Drain-Source Voltage (VDS) | 40 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) @ TA=25°C | 33 A |
| Continuous Drain Current (ID) @ TC=25°C | 100 A |
| On-Resistance R DS(on) max @ VGS=10V | 1.45 mΩ |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 115 W |
| Operating Temperature Range | -55°C to +150°C |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| RoHS Status | Compliant |
| MSL Level | MSL1 |
| Lead-Free | Yes |
BSC014N04LSTATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input, ±20V VGS max |
| Pin 2 | SOURCE — Source (low-side Kelvin return) |
| Pin 3 | SOURCE — Source (main current path) |
| Pin 4 | KS (Kelvin Source) — Kelvin-source connection for gate drive return |
| Pin 5 | DRAIN — Drain (main current path) |
| Pin 6 | DRAIN — Drain (main current path) |
| Pin 7 | DRAIN — Drain (main current path) |
| Pin 8 | DRAIN — Drain (main current path) |
Safe Operating Area (DC, TC=25°C)
Typical Applications
BSC014N04LSTATMA1 is suitable for 6 applications: 12V-24V Synchronous Buck Converter, 48V Hot-Swap and OR-ing Controller, BLDC Motor Drive Half-Bridge, USB-PD Power Path Protection Switch, Battery Protection and Load Switch, Telecom Point-of-Load POL Converter.
12V-24V Synchronous Buck Converter
The BSC014N04LSTATMA1 serves as the low-side synchronous rectifier FET in 12V-to-24V buck converters used in telecom and server VRMs, where its 1.45 mΩ max R DS(on) at VGS=10V directly minimizes conduction loss and improves overall efficiency. With 100A continuous drain current at TC=25°C, the part handles peak inductor currents above 50A with substantial thermal margin. The OptiMOS 5 trench technology reduces gate charge and output capacitance relative to prior generations, enabling switching frequencies from 300 kHz to 1 MHz without paying a switching-loss penalty. Designers place the SuperSO8 5x6 part on the low-side position with a Kelvin-source connection (pin 4) to gate-drive circuitry for clean turn-on, and solder the exposed pad to at least 1 square inch of copper to achieve the rated 1.5°C/W RthJC thermal path.
Recommended
48V Hot-Swap and OR-ing Controller
In 48V distributed-power architectures, the BSC014N04LSTATMA1 is used as the main pass-MOSFET in hot-swap and OR-ing circuits where its 40V VDS rating provides adequate margin under steady-state conditions and its 1.45 mΩ R DS(on) keeps conduction loss below 5W at 60A continuous current. The part's SuperSO8 5x6 package with exposed thermal pad enables dense PCB layouts while maintaining junction temperature below 100°C with minimal airflow. Because the 48V bus can exhibit transients up to 60V during load steps, designers add a TVS clamp at the drain to keep VDS below 40V during these events. The OptiMOS 5 generation's optimized body-diode reverse recovery also reduces switching transients during fault-clearing events, making the part well-suited to telecom equipment where hot-swap reliability is mission-critical.
Recommended
BLDC Motor Drive Half-Bridge
The BSC014N04LSTATMA1 is a strong fit for the low-side position of a 24V-36V BLDC motor-drive half-bridge used in cordless power tools, light eMobility vehicles, and small industrial fans. Its 1.45 mΩ R DS(on) and 100A pulsed drain-current capability handle the repetitive hard-switching commutation currents that occur when the FETs in a 3-phase bridge alternately switch. The OptiMOS 5 platform's reduced Qg and Qrr speed up turn-on/turn-off transitions, shrinking deadtime and improving inverter efficiency by 1-2% compared to OptiMOS 3 designs. The SuperSO8 5x6 package's exposed thermal pad allows direct solder attach to the motor-drive PCB's bottom copper layer, supporting the high RMS currents typical in continuous motor operation.
Recommended
USB-PD Power Path Protection Switch
The BSC014N04LSTATMA1 functions as the load-side protection FET in USB-PD 3.1 e-marked cable assemblies and 100W source applications, where its 1.45 mΩ R DS(on) keeps voltage drop below 50mV at 5A continuous cable current, preserving the 5V ±5% rail. With a 40V VDS rating the part tolerates the worst-case USB-PD 28V negotiation voltage plus inductive transients from the cable harness. The SuperSO8 5x6 footprint is small enough for inline cable-PCBA integration yet thermally capable of handling 15W continuous dissipation in a 60°C ambient. The OptiMOS 5 process gives the part a low gate threshold for direct GPIO drive from USB-PD controllers without needing a dedicated gate-driver IC.
Recommended
Battery Protection and Load Switch
The BSC014N04LSTATMA1 serves as the main disconnect FET in 4S-8S Li-ion battery packs and high-current load switches for power tools, e-bikes, and portable energy storage systems. Its 1.45 mΩ R DS(on) minimizes voltage drop during high-current discharge, and its 100A pulsed drain-current rating handles motor-startup inrush events without nuisance tripping. The OptiMOS 5 platform's robust avalanche rating allows the part to absorb energy from inductive loads during sudden disconnect events. The SuperSO8 5x6 package with exposed pad fits standard battery-pack PCBA footprints, and the part's MSL1 moisture sensitivity rating allows direct reflow assembly without baking.
Recommended
Telecom Point-of-Load POL Converter
In telecom and datacom point-of-load converters that step 12V or 24V intermediate bus voltages down to sub-1V core voltages for FPGAs and ASICs, the BSC014N04LSTATMA1 provides the synchronous-rectifier function in high-density multi-phase VR topologies. With 1.45 mΩ max R DS(on) and 33A continuous drain current at TA=25°C, the part delivers the high current density needed for 60A-90A multiphase designs while keeping PCB area per phase to less than 100 mm². The OptiMOS 5 generation's low Qg × R DS(on) figure-of-merit supports switching frequencies above 500 kHz, shrinking output inductors and capacitors and reducing total BOM cost. The SuperSO8 5x6 outline fits standard POL footprints used by multiphase controllers from Infineon, TI, and Renesas.
Recommended
Recommended Products Summary
Engineering reference data for BSC014N04LSTATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC014N04LSATMA1 | BSC018N04LSGATMA1 | BSC034N06NSATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TSDSON-8 - same family |
| VDS max | 40 V | 40 V | 40 V | 60 V (+50%) | 25 V (-38%) |
| R DS(on) max @ VGS=10V | 1.45 mΩ | 1.45 mΩ (identical) | 1.8 mΩ (+24%) | 3.4 mΩ (+134%) | 1.7 mΩ (+17%) |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS 5 |
| Unit Price (qty 1, USD) | 0.91 | ~0.88 | ~0.75 | ~0.95 | ~1.05 |
Key Differentiators
- Lowest R DS(on) in the OptiMOS 5 40V SuperSO8 family (vs BSC018N04LSGATMA1)
- OptiMOS 5 generation technology (vs BSC034N06NSATMA1 (OptiMOS 3 generation))
- Higher 40V VDS margin vs 25V OptiMOS 5 family members (vs BSZ017NE2LS5IATMA1)
Design Notes
Estimated: At ID=33A (TA rating) and R DS(on)=1.45 mΩ, conduction loss is P=I²R = 33² × 0.00145 ≈ 1.58 W. With the SuperSO8 5x6 package achieving RthJA ≈ 50°C/W on a 1-square-inch 2-layer copper pour, the junction-to-ambient temperature rise is roughly 79°C. To sustain 100A continuous at TC=25°C (115 W dissipation), the exposed pad must be soldered to a minimum 1 square inch of 2-oz copper with thermal vias to the bottom layer; otherwise the part will thermally limit well below the datasheet headline ratings.
Layout the SuperSO8 footprint per Infineon's PG-TDSON-8 FL land pattern recommendation: 0.65 mm pitch pads, exposed pad on the bottom with at least 9 thermal vias (0.3 mm drill, 1 mm pitch) connecting to inner copper layers. Place input/output capacitors within 2 mm of the drain and source pins to minimize parasitic inductance that causes ringing during hard-switching transitions. Use a Kelvin-source connection (pin 4) routed directly back to the gate-driver ground, isolated from the main source-current path, to eliminate source-inductance-induced gate-drive degradation.
Do not exceed the ±20V VGS absolute maximum — gate-drive spikes above 20V (caused by stray inductance in the gate-drive loop) can permanently damage the thin gate oxide of OptiMOS 5. Add a 10kΩ gate-source resistor and a TVS clamp or zener from gate to source to prevent VGS ringing during turn-off. Also note that R DS(on) is specified at TJ=25°C; at 125°C junction the on-resistance is approximately 1.4× the 25°C value, which must be included in worst-case conduction-loss calculations.
Keep the gate-drive loop area under 0.5 cm² by routing the gate trace and the gate-driver return directly above each other on adjacent layers. Minimize the drain-to-source switching-node copper area to reduce capacitive coupling to surrounding circuitry — this is especially important in buck converters where the low-side drain-source node swings at high dV/dt. Place a small RC snubber (typically 2-10 Ω in series with 1-10 nF) directly across the device if ringing exceeds 20% of VDS during bench characterization.
Compliance Information
RoHS and lead-free confirmed by Infineon product page. Not AEC-Q100 qualified; for automotive applications, select the automotive-grade variant or add a separate automotive-screening process.
