BSC014N04LSIATMA1 vs BSC014N04LS Comparison

Detailed side-by-side comparison of BSC014N04LSIATMA1 by Infineon and BSC014N04LS by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSIATMA1

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N04LSIATMA1 BSC014N04LS
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $0.35
FET Type N-Channel β€”
Technology OptiMOS 5 (trench, thin-wafer) OptiMOS 5
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID, Tc) 100 A β€”
Continuous Drain Current (ID, Ta) 31 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] β€”
RDS(on) max at VGS=10 V 1.4 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum] β€”
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] β€”
Power Dissipation (PD, Tc) 96 W β€”
Power Dissipation (PD, Ta) 2.5 W β€”
Operating Temperature Range -55 C to +150 C β€”
Package PG-TDSON-8 FL (TDSON-8 with exposed drain pad) SuperSO8 5x6 (TDSON-8FL)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Tradename OptiMOS β€”
Polarity β€” N-channel
VDS Max β€” 40 V
RDS(on) Max β€” 1.4 mOhm
ID Max β€” 198 A
Operating Temperature β€” -55C to +150C
Configuration β€” Single MOSFET
Absolute Max Rating Condition β€” TC = 25C, de-rating required above
Thermal Test Condition β€” 40 mm x 40 mm x 1.5 mm FR4, 6 cm2 70 um copper drain area
VGS Max β€” [DATA_NEEDED: gate-source voltage max]
Total Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Power Dissipation β€” [DATA_NEEDED: power dissipation]
Thermal Resistance RthJC β€” [DATA_NEEDED: thermal resistance]

Datasheets & Resources

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