BSC014N04LSIATMA1 vs BSC019N04NSGATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSIATMA1 by Infineon and BSC019N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC014N04LSIATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.58 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench, thin-wafer) | OptiMOS (trench) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A | β |
| Continuous Drain Current (ID, Ta) | 31 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10 V | 1.4 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation (PD, Tc) | 96 W | β |
| Power Dissipation (PD, Ta) | 2.5 W | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C |
| Package | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | PG-TDSON-8-1 (TDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Tradename | OptiMOS | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TA=25C | β | 30 A |
| RDS(on) max at VGS=10V | β | 2.5 mΞ© |
| RDS(on) typ at VGS=10V | β | 1.9 mΞ© |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Power Dissipation (PD) at TC=25C | β | 125 W |