BSC014N04LSIATMA1 vs BSC026N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSIATMA1 by Infineon and BSC026N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
BSC014N04LSIATMA1 ✓ ActiveInfineon
BSC026N04LSATMA1
BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΩ MOSFET | Infineon
BSC026N04LSATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC014N04LSIATMA1 | BSC026N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.78 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench, thin-wafer) | Trench-gate OptiMOS™ 5 |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, Ta) | 31 A | 23 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Power Dissipation (PD, Ta) | 2.5 W | — |
| Operating Temperature Range | -55 C to +150 C | -55°C to +150°C |
| Package | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | PG-TDSON-8-6 (TDSON 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| RoHS Status | Compliant | Compliant |
| Tradename | OptiMOS | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS™ 5 N-Channel Power MOSFET |
| Continuous Drain Current (ID, Tc=25°C) | — | 100 A |
| Pulsed Drain Current (IDM, Tc=25°C) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 2.6 mΩ |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: max RDS(on)] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 63 W |
| Channel Type | — | N-Channel |