BSC014N04LSTATMA1 vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSTATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014N04LSTATMA1
BSC014N04LSTATMA1 - 40V 1.4mΞ© OptiMOS 5 N-MOSFET | Infineon
BSC014N04LSTATMA1 β ActiveInfineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC014N04LSTATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC014N04LSTATMA1 | β |
| Technology | OptiMOS 5 (N-Channel Trench) | Trench (OptiMOS 5, thin-wafer) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 33 A | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R DS(on) max @ VGS=10V | 1.45 mΞ© | β |
| R DS(on) typical @ VGS=10V | [DATA_NEEDED: RDS(on) typical] | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 115 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +175C |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 | 1 (unlimited) |
| Lead-Free | Yes | β |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 96 W |
| Gate-Source Voltage (VGS) max | β | 20 V |