BSC014N04LSTATMA1 vs BSC034N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSTATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014N04LSTATMA1
BSC014N04LSTATMA1 - 40V 1.4mΞ© OptiMOS 5 N-MOSFET | Infineon
BSC014N04LSTATMA1 β ActiveInfineon
BSC034N06NSATMA1
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
BSC034N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC014N04LSTATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.65 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC014N04LSTATMA1 | β |
| Technology | OptiMOS 5 (N-Channel Trench) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Gate-Source Voltage (VGS) | Β±20 V | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) @ TA=25Β°C | 33 A | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance R DS(on) max @ VGS=10V | 1.45 mΞ© | β |
| R DS(on) typical @ VGS=10V | [DATA_NEEDED: RDS(on) typical] | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 115 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +150C |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 | [DATA_NEEDED: MSL level] |
| Lead-Free | Yes | β |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 74 W |