BSC014N04LSTATMA1 vs BSZ017NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSTATMA1 by Infineon and BSZ017NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014N04LSTATMA1
BSC014N04LSTATMA1 - 40V 1.4mΞ© OptiMOS 5 N-MOSFET | Infineon
BSC014N04LSTATMA1 β ActiveInfineon
BSZ017NE2LS5IATMA1
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8
BSZ017NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | BSC014N04LSTATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.64 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC014N04LSTATMA1 | β |
| Technology | OptiMOS 5 (N-Channel Trench) | β |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 33 A | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R DS(on) max @ VGS=10V | 1.45 mΞ© | β |
| R DS(on) typical @ VGS=10V | [DATA_NEEDED: RDS(on) typical] | β |
| Power Dissipation (TA) | 3 W | 2.1 W |
| Power Dissipation (TC) | 115 W | 50 W |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TSDSON-8-FL (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 | β |
| Lead-Free | Yes | β |
| Polarity | β | N-Channel |
| Continuous Drain Current (TA) | β | 27 A |
| Continuous Drain Current (TC) | β | 40 A |
| On-Resistance RDS(on) @ VGS=10V | β | 1.7 mΞ© |
| On-Resistance Test Current | β | 20 A |
| Gate-Source Voltage (VGS) Rating | β | Β±16 V |
| Gate Threshold Voltage VGS(th) | β | 2 V @ 250 Β΅A |
| Total Gate Charge Qg | β | 30 nC @ VGS=10V |
| Input Capacitance Ciss | β | 2000 pF @ VDS=12V |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |
| Series / Family | β | OptiMOS 5 25V |