BSC014N04LSTATMA1 vs ISZ019N03L5SATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSTATMA1 by Infineon and ISZ019N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014N04LSTATMA1
BSC014N04LSTATMA1 - 40V 1.4mΞ© OptiMOS 5 N-MOSFET | Infineon
BSC014N04LSTATMA1 β ActiveInfineon
ISZ019N03L5SATMA1 - 30V 1.9mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | BSC014N04LSTATMA1 | ISZ019N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC014N04LSTATMA1 | β |
| Technology | OptiMOS 5 (N-Channel Trench) | β |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 33 A | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R DS(on) max @ VGS=10V | 1.45 mΞ© | β |
| R DS(on) typical @ VGS=10V | [DATA_NEEDED: RDS(on) typical] | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 115 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +175C (TJ max) |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TSDSON-8-FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| RoHS Status | Compliant | β |
| MSL Level | MSL1 | 1 (per JEDEC J-STD-020) |
| Lead-Free | Yes | β |
| Product Family | β | OptiMOS 5 (<= 40V) |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 22 A |
| Continuous Drain Current (ID) at TC=25C | β | 40 A |
| RDS(on) at VGS=10V | β | 1.9 mΞ© (typical, ID=20A) |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typical) |
| Gate-Source Voltage Rating (VGS) | β | Β±20 V |
| Total Gate Charge (Qg) | β | 44 nC at VGS=10V |
| Input Capacitance (Ciss) | β | 2800 pF at VDS=15V |
| RoHS / REACH | β | Compliant |
| Avalanche Rated | β | Yes |
| RG-tested | β | 100% |