BSC014N06NSATMA1 vs BSC072N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC014N06NSATMA1 by Infineon and BSC072N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N06NSATMA1 BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N06NSATMA1 BSC072N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V β€”
Gate-Source Voltage (VGS) Max +/- 20 V β€”
Continuous Drain Current (ID) at Ta 30 A β€”
Continuous Drain Current (ID) at Tc 100 A 74 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) Typ @ VGS=10V 1.4 mOhm β€”
On-Resistance RDS(on) Max @ VGS=10V 1.45 mOhm β€”
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 156 W 69 W
Operating Temperature Range -55C to +150C [DATA_NEEDED: full min/max operating Tj]
Package PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Technology OptiMOS 5 (shielded-gate trench) OptiMOS 5
Part Family β€” BSC072N08NS5 (OptiMOS 5)
Drain-Source Voltage (VDS) Max β€” 80 V
Drain-Source On-Resistance (RDS(on)) Max β€” 7.2 mOhm at VGS=10V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) β€” [DATA_NEEDED: typical Qg]
Shipping Pack β€” Tape & Reel (ATMA1)
Standard Pack Quantity β€” 5000

Datasheets & Resources

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