BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: BSC014N06NSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.04 | $520.00 |
| 1,000 | $0.89 | $890.00 |
BSC014N06NSATMA1 Overview
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device that conducts current between drain and source when a sufficient positive gate-source voltage is applied. Power MOSFETs sit within the power-semiconductor hierarchy: MOSFET -> discrete semiconductor -> power management -> semiconductor, and are the dominant switching element in sub-200 V, sub-100 kHz SMPS, motor-control, and hot-swap designs because they switch faster, are easier to drive, and exhibit lower conduction loss than bipolar devices at low voltages.
Key features include 1.4 mOhm typical RDS(on) (10 V VGS), +/-20 V maximum gate-source voltage with +/-10 V recommended drive, 60 V drain-source breakdown, and a SuperSO8 5x6 mm footprint that minimizes PCB area and provides a low thermal resistance path via the exposed drain pad. The OptiMOS 5 technology platform improves Figure of Merit (RDS(on) x Qg) by typically 30-50% versus prior OptiMOS generations, directly translating to lower switching losses at high frequency.
Internally the device uses a shielded-gate trench MOSFET cell architecture optimized for low output charge (Qoss) and low gate charge (Qg). The 5x6 mm SuperSO8 footprint is footprint-compatible with industry-standard Power-SO8 / LFPAK packages from other vendors, simplifying second-sourcing. The exposed drain pad provides direct PCB heatsinking, enabling 156 W Tc dissipation with proper thermal via design.
Typical applications include synchronous-rectifier stages in 48 V telecom and server buck converters, high-current OR-ing and hot-swap controllers, brushless DC motor drives, battery management protection FETs in 12 V/24 V e-mobility, and Class-D audio amplifier output stages. Each application benefits from the very low RDS(on) and the small SuperSO8 footprint.
When designing with this part, ensure the gate driver can source/sink adequate peak current (Qg and Qgd are key) and that the PCB layout uses sufficient copper area and thermal vias under the exposed pad to achieve the rated 156 W Tc dissipation. Above 50 A continuous, derate aggressively or use a smaller SuperSO8 footprint than DPAK alternatives.
Drop-in alternatives for BSC014N06NSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC014N06NSATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Junction Temperature, MSL Level, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC014N06NS
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD090N03LGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.34 / Unit
View Datasheet →BSC059N04LS6ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.74 / Unit
View Datasheet →BSC014N06NSATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Gate-Source Voltage (VGS) Max | +/- 20 V |
| Continuous Drain Current (ID) at Ta | 30 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | 1.45 mOhm |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 156 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Technology | OptiMOS 5 (shielded-gate trench) |
BSC014N06NSATMA1 Pin Configuration
| Pin 1 | Source — Source connection (pin 1 of 8) |
| Pin 2 | Source — Source connection (pin 2 of 8) |
| Pin 3 | Source — Source connection (pin 3 of 8) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain connection (pin 5 of 8) |
| Pin 6 | Drain — Drain connection (pin 6 of 8) |
| Pin 7 | Drain — Drain connection (pin 7 of 8) |
| Pin 8 | Drain — Drain connection (pin 8 of 8) |
| Pin EP | Drain (Exposed Pad) — Exposed drain pad for heatsinking and PCB thermal dissipation |
Safe Operating Area (DC)
Typical Applications
BSC014N06NSATMA1 is suitable for 7 applications: 24V Synchronous Rectifier, Hot-Swap and OR-ing Controller, Brushless DC (BLDC) Motor Drive, Battery Management Protection FET, Class-D Audio Amplifier Output Stage, Telecom 48V Bus POL Converter, Solar Inverter and Solar Power Optimizer.
24V Synchronous Rectifier
The BSC014N06NSATMA1 is ideal for the low-side synchronous rectifier position in 24 V buck converters. Its 1.4 mOhm typical RDS(on) at VGS=10 V reduces conduction loss to roughly 14 W at 100 A, while the 60 V VDS rating provides essential margin above the 24 V bus plus inductive ringing. The SuperSO8 5x6 mm footprint with exposed drain pad enables direct PCB heatsinking via thermal vias, supporting the 156 W Tc power dissipation rating. Compared to a Schottky diode, this MOSFET reduces rectifier loss by 50-70% at full load, improving overall converter efficiency by 1-3 percentage points in telecom and server 48 V-to-load POL designs.
Recommended
Hot-Swap and OR-ing Controller
BSC014N06NSATMA1 serves as the pass-FET in 24 V hot-swap and OR-ing applications where its 60 V VDS rating handles transient voltage spikes during load insertion. The 1.4 mOhm RDS(on) at VGS=10 V minimizes voltage drop across the FET in normal operation, while the 100 A Tc current rating supports high-power server and telecom feeds. Placed in series with the 24 V rail and controlled by a hot-swap controller (e.g., LTC4282-class parts), it provides circuit-breaker functionality and inrush current limiting. The exposed drain pad enables adequate thermal dissipation during the brief SOA stress of load-step events, with the 156 W Tc rating giving substantial transient headroom.
Recommended
Brushless DC (BLDC) Motor Drive
BSC014N06NSATMA1 is well-suited for the low-side switching position in 24 V BLDC motor drive stages. Its 1.4 mOhm typical RDS(on) reduces I2R conduction loss during PWM commutation, directly improving drive efficiency and reducing heatsink requirements. The 60 V VDS rating provides margin against the back-EMF spikes of 24 V motors, while the 100 A Tc current rating supports peak motor currents in the 30-50 A range typical of e-bike, robotics, and small-EV applications. The SuperSO8 footprint with exposed drain pad enables direct PCB heatsinking, allowing compact integration with gate drivers such as the DRV8242SQRHLRQ1.
Recommended
Battery Management Protection FET
In 12 V and 24 V battery management systems, BSC014N06NSATMA1 functions as the high-side or low-side protection FET during charge and discharge events. The 60 V VDS rating handles transient voltage excursions on automotive 12 V buses (load-dump up to 35 V) and industrial 24 V buses. The 1.4 mOhm RDS(on) minimizes voltage drop in the conducting path, preserving battery capacity and reducing heat generation during high-current discharge. When paired with the BQ79656PAPRQ1 battery monitor, the system provides cell balancing, over-current protection, and state-of-charge estimation in e-mobility and energy-storage applications.
Recommended
Class-D Audio Amplifier Output Stage
BSC014N06NSATMA1 works as the output switching FET in Class-D audio amplifiers operating from 24 V rails, where its low RDS(on) and fast switching minimize both conduction loss and switching loss. The 60 V VDS rating handles the back-EMF of speaker inductors with substantial margin, while the 100 A Tc current capability supports high-power amplifier stages (500 W+) without thermal limiting. The OptiMOS 5 technology delivers low output charge (Qoss), which reduces the dead-time required between half-bridge transitions and improves THD+N performance. The SuperSO8 footprint integrates cleanly with gate drivers designed for audio applications.
Recommended
Telecom 48V Bus POL Converter
BSC014N06NSATMA1 functions as the synchronous rectifier in 48 V telecom bus point-of-load converters where its 60 V VDS rating comfortably exceeds the 48 V nominal plus 20% transient envelope. The 1.4 mOhm RDS(on) at full VGS=10 V drive keeps rectifier loss below 1.5% even at 60 A output, supporting the 95%+ efficiency targets of modern telecom and datacom hardware. The 156 W Tc power dissipation rating allows the exposed drain pad to be heatsunk through PCB copper and thermal vias without an external heatsink, simplifying mechanical design. The OptiMOS 5 platform reduces Qg compared to prior generations, enabling higher switching frequencies and smaller magnetics.
Recommended
Solar Inverter and Solar Power Optimizer
BSC014N06NSATMA1 is suited for the switching and rectifier positions in low-voltage solar power optimizers and micro-inverters operating from 24-48 V PV panel strings. Its 60 V VDS rating handles open-circuit panel voltage with margin, while the low RDS(on) maximizes energy harvest efficiency particularly at partial-load conditions where MOSFET conduction loss dominates. The 100 A Tc rating supports high-power string inverters up to several kW per phase. The SuperSO8 footprint with exposed pad simplifies PCB layout in compact outdoor enclosures where board space is constrained and thermal management via the chassis is desirable.
Recommended
Recommended Products Summary
Engineering reference data for BSC014N06NSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC014N06NS | IPD090N03LGATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) - same | PG-TDSON-8-17 (SuperSO8 5x6 mm) - same | PG-TDSON-8-17 (SuperSO8 5x6 mm) - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 30 V | 40 V |
| RDS(on) Typ @ VGS=10V | 1.4 mOhm | 1.4 mOhm | 0.9 mOhm | 5.9 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS (gen not specified) | OptiMOS 6 |
Key Differentiators
- Lowest RDS(on) in OptiMOS 5 60V SuperSO8 family (vs BSC059N04LS6ATMA1)
- 60V VDS rating enables 24V bus designs (vs IPD090N03LGATMA1)
- OptiMOS 5 platform with industry-leading FOM (vs BSC014N06NS)
Design Notes
The SuperSO8 5x6 mm package achieves 156 W Tc power dissipation only when the exposed drain pad is soldered to a sufficiently large copper area with thermal vias. For a 4-layer PCB with 2 oz outer copper on the drain pad, recommend at least 1 square inch of copper plus 12 thermal vias (0.3 mm drill, 1 mm pitch) to approach the datasheet thermal resistance. Without thermal vias, expect at least 30% higher junction-to-ambient thermal resistance and aggressive derating above 30 A continuous. Estimated: at 100 A with 1.45 mOhm RDS(on), conduction loss is approximately 14.5 W; with a realistic 50 C/W theta-JA, junction rises roughly 60 C above ambient.
Place the gate driver as close as possible to pin 4 (gate) to minimize gate-loop inductance, which causes ringing and possible MOSFET avalanche. Keep the gate-trace width at least 0.5 mm and use a 10-100 ohm gate-source resistor to damp high-frequency ringing. The source pins (1-3) should be tied to a small copper pour connected to the system ground plane, not directly to a wide ground bar, to avoid creating a source-inductance-induced gate-drive voltage shift during high di/dt switching events.
Do not exceed +/-20 V VGS absolute maximum - use a gate-source TVS or zener clamp if the driver could overshoot during high di/dt turn-off. Ensure the selected gate driver can source/sink the Qg charge at the desired switching frequency; OptiMOS 5 parts have lower Qg than prior generations but still require adequate peak gate current. Avoid operating in linear region during turn-on/off transitions - the SOA curve drops sharply above 30 V VDS, so any cross-conduction must be minimized through dead-time control.
For synchronous rectifier applications, the body diode of BSC014N06NSATMA1 may need to be considered during dead-time intervals. If the application involves continuous hard commutation (e.g., bridge topologies), external Schottky anti-parallel diodes may be required to reduce body-diode reverse-recovery losses. In buck topologies the body diode conducts only briefly during dead-time and is typically acceptable.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified; for automotive designs use -Q1 variant if available. Halogen-free and lead-free per Infineon OptiMOS 5 datasheet.
