BSC015NE2LS5IATMA1 vs BSC052N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC015NE2LS5IATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC015NE2LS5IATMA1
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
BSC015NE2LS5IATMA1 β ActiveInfineon
BSC052N08NS5ATMA1
BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon
BSC052N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC015NE2LS5IATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.69 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 25 V | β |
| Continuous Drain Current (ID) at Ta | 33 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 50 W | β |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Technology | OptiMOS 5 trench | OptiMOS 5 |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Part Number | β | BSC052N08NS5ATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc) | β | 95 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 5.2 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage VGS(th) typ | β | 2.5-3.0 V |
| Total Power Dissipation (Tc) | β | 83 W |
| Total Power Dissipation (Ta) | β | 2.5 W |
| Operating Junction Temperature | β | -55C to +150C |