BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
MPN: BSC015NE2LS5IATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.51 | $1.51 |
| 10 | $1.36 | $13.60 |
| 100 | $1.09 | $109.00 |
| 500 | $0.9 | $450.00 |
| 1,000 | $0.75 | $750.00 |
| 2,000 | $0.69 | $1,380.00 |
BSC015NE2LS5IATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to switch and condition power in electronic systems. N-channel MOSFETs are the dominant choice for low-side and synchronous-rectifier positions in switch-mode power supplies because their higher carrier mobility delivers lower on-resistance per unit area than equivalent P-channel parts. Within the power-semiconductor hierarchy, this MOSFET sits under: power MOSFET -> discrete semiconductor -> power management. OptiMOS 5 represents Infineon's fifth-generation optimized trench process that minimizes FOM (Figure of Merit = RDS(on) x Qg) for the 25V class.
Key specifications include a maximum drain-source on-resistance of 1.5 mOhm at VGS = 10 V (per Infineon part-page data), ultra-low gate charge for high-frequency operation, and a power dissipation rating of 2.5 W at Ta and 50 W at Tc. The PG-TDSON-8-6 package exposes the die on a large thermal pad, allowing direct PCB copper heatsinking and keeping junction temperature rise modest at typical load currents. This combination of low RDS(on) and small footprint is the central value proposition.
The OptiMOS 5 process technology uses an advanced trench cell architecture optimized for both low conduction loss and low switching loss, achieving benchmark FOM figures in the 1.5 mOhm-class 25V market. The device is avalanche-rated and qualified for industrial and automotive environments (subject to specific Q-grade variant).
Typical applications include synchronous rectification in telecom DC-DC bricks, CPU/GPU VRM phases, server and datacom POL converters, motor drive half-bridges, hot-swap and OR-ing switches, and automotive 12V bus converters. Design consideration: ensure gate-drive voltage is 10 V for full RDS(on) rating; 4.5 V drive increases RDS(on) significantly. A low-inductance PCB layout with kelvin-source connection is required to realize the rated switching performance.
Drop-in alternatives for BSC015NE2LS5IATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC015NE2LS5IATMA1 (same form factor and footprint) — differing in Technology, Operating Temperature Range, Package, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC010NE2LSIATMA1
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →BSC015NE2LS5I
✅ Drop-In📋 Reference alternative (not in catalog)
ISC015N04NM5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.98 / Unit
View Datasheet →ISC0802NLSATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.8 / Unit
View Datasheet →NTMFS015N25MC
✅ Drop-In📋 Reference alternative (not in catalog)
BSC052N08NS5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.52 / Unit
View Datasheet →BSC015NE2LS5IATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 25V |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 25 V |
| Continuous Drain Current (ID) at Ta | 33 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm |
| Power Dissipation at Ta | 2.5 W |
| Power Dissipation at Tc | 50 W |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Technology | OptiMOS 5 trench |
| Operating Temperature Range | -55C to +150C (junction) |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
BSC015NE2LS5IATMA1 Pin Configuration
| Pin 1 | Gate — Gate input - drive with 10V for full RDS(on) rating |
| Pin 2 | Source — Source connection (connected to Source pins 3,7,8 internally) |
| Pin 3 | Source — Source connection |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | Source (Kelvin) — Kelvin-source sense pin - use for gate-drive return to minimize switching loss |
| Pin 8 | Source — Source connection |
| Pin EP | Drain — Exposed pad - Drain connection; must be soldered to PCB copper for thermal dissipation |
Safe Operating Area (DC)
Typical Applications
BSC015NE2LS5IATMA1 is suitable for 6 applications: 12V Synchronous Rectification, CPU/GPU VRM Power Stage, Server and Datacom POL Converters, Motor Drive Half-Bridge, Hot-Swap and OR-ing Switch, Automotive 12V Bus Converters.
12V Synchronous Rectification
The BSC015NE2LS5IATMA1 is optimized for low-side synchronous-rectifier positions in 12V DC-DC converters. Its 1.5 mOhm RDS(on) at 25V VDS max, paired with the PG-TDSON-8-6 SuperSO8 5x6 footprint, minimizes conduction loss in the secondary-side rectifier of buck or forward converters. Engineers typically place two of these in parallel for higher-current rails. The OptiMOS 5 process delivers low Qg, reducing dead-time losses at 300-500 kHz switching frequencies common in server and telecom bricks.
Recommended
CPU/GPU VRM Power Stage
In multiphase voltage-regulator modules (VRMs) for CPUs and GPUs, the BSC015NE2LS5IATMA1 serves as the low-side MOSFET in each phase. Its 1.5 mOhm RDS(on) and low gate charge deliver benchmark FOM at the 300 kHz-1 MHz switching frequencies typical of modern VRMs. The SuperSO8 5x6 footprint allows high-power-density layouts where per-phase current is 30-50 A. The 50 W power dissipation rating at Tc enables sustained high-current operation without thermal throttling.
Recommended
Server and Datacom POL Converters
The BSC015NE2LS5IATMA1 is widely deployed in 12V-input point-of-load (POL) converters for servers, datacom, and telecom equipment. Its 25V VDS rating comfortably exceeds 12V nominal bus transients up to 16V, and the 1.5 mOhm RDS(on) minimizes conduction loss at high load currents. The PG-TDSON-8-6 footprint is industry-standard for high-density POL designs. OptiMOS 5 technology ensures low switching loss at the 500 kHz-1 MHz frequencies used in modern POL converters.
Recommended
Motor Drive Half-Bridge
For low-voltage BLDC motor drives and half-bridge configurations, the BSC015NE2LS5IATMA1 provides the low-side switch in 12-24V systems. Its 100 A continuous current rating at Tc and 50 W power dissipation support high-current motor phases. The SuperSO8 5x6 package enables compact drive electronics. Designers must add a complementary P-channel or use a gate driver with bootstrap for high-side switching.
Recommended
Hot-Swap and OR-ing Switch
The BSC015NE2LS5IATMA1 serves as the protection switch in 12V hot-swap and OR-ing applications. Its 1.5 mOhm RDS(on) minimizes voltage drop and power dissipation during steady-state operation, while the 100 A pulse rating handles inrush transients. The PG-TDSON-8-6 package allows direct PCB mounting with adequate copper cooling. In OR-ing configurations, the low RDS(on) reduces forward conduction loss versus Schottky-diode solutions.
Recommended
Automotive 12V Bus Converters
For automotive 12V bus applications such as LED lighting modules, body controllers, and accessory power, the BSC015NE2LS5IATMA1 provides an efficient switching solution. Note that the standard variant requires AEC-Q101 verification for automotive deployment - select the appropriate Q-grade ordering code. Its 25V VDS rating handles 12V load-dump transients up to 16V with proper TVS protection. The SuperSO8 footprint is automotive-qualified-package family.
Recommended
Recommended Products Summary
Engineering reference data for BSC015NE2LS5IATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC010NE2LSIATMA1 | BSC015NE2LS5I | ISC015N04NM5ATMA1 | ISC0802NLSATMA1 | NTMFS015N25MC |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | PG-TDSON-8-6 (SuperSO8 5x6) - same | PQFN 5x6 (SuperSO8 footprint compatible) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| VDS Max (V) | 25 | 25 | 25 | 40 | 30 | 25 |
| RDS(on) Max (mOhm) @ VGS=10V | 1.5 | 1.0 | 1.5 | 1.5 | 8.0 | 1.5 |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi advanced trench |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Key Differentiators
- Lowest RDS(on) in 25V OptiMOS 5 SuperSO8 family (vs BSC010NE2LSIATMA1)
- Lower VDS rating optimized for 12V bus applications (vs ISC015N04NM5ATMA1)
- Cross-brand pin-compatible footprint (vs NTMFS015N25MC (onsemi))
- Higher VDS margin for transient robustness (vs NTMFS015N25MC)
Design Notes
Estimated: at 30A continuous drain current and 5V VDS, conduction loss P = I^2 x RDS(on) = 30^2 x 0.0015 = 1.35W. The PG-TDSON-8-6 package with a 1 square-inch copper pour on a 4-layer board achieves theta_JA of approximately 50 C/W, giving a junction temperature rise of ~67C above ambient. For sustained 50W operation at Tc, an external heatsink or substantial copper area (>=2 sq-in) on top and bottom layers is required. The exposed drain pad MUST be soldered to the PCB for proper thermal dissipation.
Use the kelvin-source pin (pin 7) as the gate-drive return path to eliminate source-inductance-induced gate-voltage degradation. Place the gate-drive resistor within 5mm of pin 1, with the gate-drive IC return connected only to pin 7 - NOT to the power-source PCB copper. Keep the gate loop area under 0.5 sq-cm. Minimize drain-source copper area in the switching cell to reduce parasitic capacitance that slows switching. Per Infineon SuperSO8 application note, proper layout can reduce switching losses by 30%.
Do not drive the gate with voltages above +/-20V (VGS absolute max). At VGS = 4.5V, RDS(on) increases by ~2x compared to VGS = 10V - always verify gate-drive voltage under all load conditions. Do not exceed 25V VDS even during transient spikes - add a TVS diode or snubber for inductive loads. The exposed pad is the drain; do not route signal traces under it. Avoid placing multiple MOSFETs in parallel without gate-source resistors to suppress parasitic oscillations.
Recommended PCB footprint follows IPC-7351 nominal-size land pattern for SuperSO8 5x6 with 0.65mm pitch. Use 4-layer stackup with 1oz copper outer layers and 0.5oz inner layers. Place input/output capacitors within 2mm of the drain and source pads. Thermal vias (0.3mm diameter, 1mm pitch) under the exposed pad connecting to inner copper planes significantly reduce junction temperature. Follow JEDEC J-STD-020 for reflow profile; this part is rated MSL1.
Compliance Information
Standard variant is industrial grade (not AEC-Q101 qualified). For automotive applications, select the appropriate Q-grade variant from Infineon's ordering information table. RoHS and REACH compliance per Infineon product page.
