BSC015NE2LS5IATMA1 vs BSZ011NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of BSC015NE2LS5IATMA1 by Infineon and BSZ011NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
BSC015NE2LS5IATMA1 β ActiveInfineon
BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon
BSZ011NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | BSC015NE2LS5IATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.69 | $0.55 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 25V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 25 V | β |
| Continuous Drain Current (ID) at Ta | 33 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 50 W | β |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Technology | OptiMOS 5 trench | OptiMOS 5 (Trench) |
| Operating Temperature Range | -55C to +150C (junction) | -55Β°C to +150Β°C |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 35 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | β | 1.1 mΞ© (typical, per datasheet title) |
| Power Dissipation at TA=25Β°C | β | 2.1 W |
| Power Dissipation at TC=25Β°C | β | 69 W |
| Gate Threshold Voltage VGS(th) | β | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | β | 4.5 V to 10 V |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |