BSC015NE2LS5IATMA1 vs ISC015N04NM5ATMA1 Comparison
Detailed side-by-side comparison of BSC015NE2LS5IATMA1 by Infineon and ISC015N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC015NE2LS5IATMA1
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
BSC015NE2LS5IATMA1 β Active
Specification Comparison
| Parameter | BSC015NE2LS5IATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.69 | $0.98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 25 V | β |
| Continuous Drain Current (ID) at Ta | 33 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 50 W | β |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | 8 |
| Technology | OptiMOS 5 trench | OptiMOS 5 (trench MOSFET) |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +175 C (junction, per OptiMOS 5) |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per Infineon SuperSO8 family) |
| Series | β | OptiMOS 5 40V Normal Level |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | 3.4 V (typ) |
| R_DS(on) max | β | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | β | 33 A |
| Continuous Drain Current (ID) at Tc=25C | β | 206 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 115 W |
| Package / Case | β | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Drive Level | β | Normal Level (VGS(th) ~3.4 V) |