BSC016N06NSATMA1 vs BSZ110N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC016N06NSATMA1 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC016N06NSATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOSβ’ 5 60V | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Tc) | 100 A | β |
| Continuous Drain Current (ID, TA) | 30 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΞ© | β |
| Total Gate Charge (Qg) | 71 nC | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 139 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | [DATA_NEEDED: operating temperature range] |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Gate Drive (recommended) | 10 V | β |
| Technology | OptiMOSβ’ 5 | OptiMOS 5 N-Channel Power MOSFET |
| Part Family | β | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Tc | β | 40 A |
| On-Resistance RDS(on) max | β | 11 mΞ© |
| Power Dissipation (PD) at Tc | β | 50 W |
| Polarity | β | N-Channel |
| Configuration | β | Single MOSFET |
| Gate Drive Voltage (VGS) | β | [DATA_NEEDED: VGS rating] |