BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon
MPN: BSZ110N08NS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.06 | $2.06 |
| 10 | $0.984 | $9.84 |
| 100 | $0.879 | $87.90 |
| 500 | $0.695 | $347.50 |
| 1,000 | $0.534 | $534.00 |
| 5,000 | $0.4423 | $2,211.50 |
BSZ110N08NS5ATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route and regulate power in electronic circuits. Within the broader semiconductor taxonomy, MOSFETs fall under discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs. OptiMOS 5 represents Infineon's fifth-generation low-voltage power MOSFET platform, offering up to 44% reduction in both output capacitance and on-resistance versus prior generations, delivering higher system efficiency in a smaller footprint.
Key features include an ultra-low RDS(on) of 11 mΩ max at VGS=10 V, optimized gate charge for high-frequency operation, and a power dissipation rating of 50 W at Tc. The PQFN 3.3 x 3.3 package provides an exposed thermal pad that minimizes junction-to-case thermal resistance, enabling sustained high-current operation without external heatsinking in typical application conditions. The device is rated for operation with case temperatures maintained per the derating diagram.
The device is targeted specifically at synchronous rectification in switch-mode power supplies (SMPS), server and telecom DC-DC buck converters, and battery management systems. The optimized intrinsic body diode and low Qrr support reliable hard-switching and soft-switching topologies. The combination of low on-resistance and low gate charge makes it ideal for both the low-side and high-side positions in half-bridge and full-bridge converter stages.
Typical applications include 48 V telecom bus converters, point-of-load (POL) regulators for processors and FPGAs, motor drive H-bridges, and eMobility battery protection circuits. The 80 V rating provides ample headroom for 12 V and 24 V automotive systems, while the 40 A current capability addresses high-current rail requirements in industrial and server power architectures.
When designing with this part, ensure the PCB layout places the source pad directly over a copper thermal via array to the inner ground plane. The exposed pad must be soldered to achieve the rated thermal performance; insufficient thermal vias will cause excessive junction temperature rise at full load.
Drop-in alternatives for BSZ110N08NS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSZ110N08NS5ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Part Number, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC117N08NS5ATMA1
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View Datasheet →BSC047N08NS3GATMA1
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View Datasheet →BSC023N08NS5SCATMA1
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View Datasheet →IAUC120N04S6L012ATMA1
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View Datasheet →ISC015N04NM5ATMA1
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View Datasheet →BSZ110N08NS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 5 |
| Technology | OptiMOS 5 N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at Tc | 40 A |
| On-Resistance RDS(on) max | 11 mΩ |
| Power Dissipation (PD) at Tc | 50 W |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Mounting Type | Surface Mount |
| Polarity | N-Channel |
| Configuration | Single MOSFET |
| RoHS Status | Compliant |
BSZ110N08NS5ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (connected to exposed pad) |
| Pin 2 | Source — Source connection (connected to exposed pad) |
| Pin 3 | Gate — Gate drive input |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | Drain — Drain connection |
| Pin 6 | Drain — Drain connection |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Drain — Drain connection |
Safe Operating Area
Typical Applications
BSZ110N08NS5ATMA1 is suitable for 6 applications: 48V Telecom Bus DC-DC Converters, Synchronous Rectification in SMPS, 12V/24V Automotive Subsystems, Server and Datacenter Point-of-Load Regulators, Battery Management and Protection, Motor Drive H-Bridge Stages.
48V Telecom Bus DC-DC Converters
The BSZ110N08NS5ATMA1 is well-suited for 48V telecom bus POL converters where its 80V VDS rating provides ample headroom above the 48V nominal rail, including transient spikes up to 60V. The 11 mOhm RDS(on) at VGS=10V minimizes conduction losses in the synchronous rectification stage, while the optimized gate charge enables switching frequencies above 500 kHz for compact inductor sizing. The PQFN 3.3x3.3 footprint supports high power density layouts. Pair with a digital PWM controller such as Infineon's XDPP1100 for closed-loop regulation.
Recommended
Synchronous Rectification in SMPS
The BSZ110N08NS5ATMA1 is specifically optimized by Infineon for synchronous rectification in switch-mode power supplies, replacing Schottky diodes in the low-side position. Its low body-diode Qrr and 11 mOhm RDS(on) deliver up to 44% output capacitance reduction versus prior generations, reducing switching losses at high frequencies. In a typical 12V-input, 1V-output buck converter, the BSZ110N08NS5ATMA1 achieves efficiencies above 95% at 20A load. The PG-TSDSON-8-FL package enables direct mounting under the high-side FET for compact half-bridge layouts.
Recommended
12V/24V Automotive Subsystems
The BSZ110N08NS5ATMA1 is well-suited for non-automotive-qualified 12V and 24V power subsystems, including body control modules, lighting drivers, and accessory power rails. The 80V VDS provides 3x margin above 24V nominal, withstanding load-dump transients up to 35V. The 40A continuous current capability addresses high-current loads such as seat heaters and blower motors. The PQFN package withstands automotive temperature ranges when properly derated. For AEC-Q100 qualified variants, refer to Infineon's automotive-grade OptiMOS portfolio.
Recommended
Server and Datacenter Point-of-Load Regulators
The BSZ110N08NS5ATMA1 addresses the high-current, high-efficiency requirements of server POL converters feeding processor and memory rails. Its 11 mOhm RDS(on) and low gate charge minimize switching losses at the 500 kHz to 1 MHz switching frequencies typical of modern multi-phase VR topologies. The PQFN 3.3x3.3 footprint enables compact placement per phase, and the exposed thermal pad supports sustained 40A operation with proper PCB thermal via arrays. Multi-phase designs can parallel multiple BSZ110N08NS5ATMA1 devices for higher current rails.
Recommended
Battery Management and Protection
The BSZ110N08NS5ATMA1 is suitable for battery management system (BMS) protection circuits, including low-side disconnect switches and cell balancing paths. The 80V rating supports multi-cell battery packs up to 16S lithium-ion configurations. The 40A continuous current capability addresses high-discharge applications such as e-bikes, portable power tools, and small eMobility platforms. The low RDS(on) minimizes heat dissipation in the protection path, reducing thermal management requirements in enclosed battery packs.
Recommended
Motor Drive H-Bridge Stages
The BSZ110N08NS5ATMA1 functions effectively as both high-side and low-side switches in H-bridge motor drive topologies for small BLDC and stepper motor applications. Its low RDS(on) and fast switching capability support PWM frequencies up to 100 kHz for smooth motor control. The 40A current rating addresses motor ratings up to approximately 1 kW at 24V. The PQFN package enables compact drive stage layouts. The optimized body diode supports reliable commutation without external freewheeling components in many applications.
Recommended
Recommended Products Summary
Engineering reference data for BSZ110N08NS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC117N08NS5ATMA1 | BSC047N08NS3GATMA1 | BSC023N08NS5SCATMA1 | IAUC120N04S6L012ATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-FL (PQFN 3.3x3.3) | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same |
| VDS max | 80 V | 80 V | 80 V | 80 V | 40 V | 40 V |
| RDS(on) max | 11 mOhm | 11 mOhm | 4.7 mOhm | 2.3 mOhm | 1.2 mOhm | 1.5 mOhm |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- OptiMOS 5 generation with 44% lower output capacitance (vs BSC047N08NS3GATMA1)
- Industry-standard PQFN 3.3x3.3 footprint with broad second-source availability (vs Larger DPAK alternatives)
- Optimized body diode for synchronous rectification (vs BSZ900N20NS3GATMA1)
Design Notes
The PG-TSDSON-8-FL package achieves its rated 50W power dissipation only when the exposed thermal pad is soldered to a PCB thermal via array. At minimum, use a 3x3 grid of 0.3mm thermal vias connecting the exposed pad to inner ground planes. Insufficient thermal vias will cause junction temperature to exceed rated limits at full 40A load. Estimated: at 40A with 11 mOhm RDS(on), conduction loss is approximately 17.6W; thermal management is critical.
Minimize the high-side-to-low-side power loop inductance by placing the BSZ110N08NS5ATMA1 within 3mm of the controller or driver IC. Use wide copper pours on both source (low-side) and drain (high-side) connections. For switching frequencies above 500 kHz, consider using a 4-layer PCB with a dedicated ground plane to reduce EMI and improve signal integrity. The gate drive trace should be kept short and routed away from the drain switching node.
Do not exceed the 80V VDS maximum rating, even during transient conditions. Load-dump transients on 24V automotive buses can reach 35V, which is within rating, but inductive kickback in motor drive applications can exceed VDS if not properly snubbed. Verify VGS is within the datasheet-rated range (typically +/-20V absolute maximum) before applying gate drive. Insufficient gate drive voltage below the VGS(th) threshold will cause the device to operate in linear region, causing excessive heat dissipation.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications requiring formal qualification, refer to Infineon's automotive-grade OptiMOS portfolio with explicit automotive part suffixes.
