BSC016N06NSTATMA1 vs BSC014N04LSTATMA1 Comparison

Detailed side-by-side comparison of BSC016N06NSTATMA1 by Infineon and BSC014N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC016N06NSTATMA1

BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 βœ“ Active
Infineon
BSC014N04LSTATMA1

BSC014N04LSTATMA1 - 40V 1.4mΞ© OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 βœ“ Active

Specification Comparison

Parameter BSC016N06NSTATMA1 BSC014N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC016N06NSTATMA1 BSC014N04LSTATMA1
FET Type N-Channel β€”
Technology OptiMOS 5 OptiMOS 5 (N-Channel Trench)
Drain-to-Source Voltage (VDS) 60 V β€”
Gate-to-Source Voltage (VGS) Β±20 V β€”
Continuous Drain Current (ID, Tc=25C) 100 A β€”
Continuous Drain Current (ID, Ta=25C) 31 A β€”
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm β€”
Power Dissipation (Tc) 167 W β€”
Power Dissipation (Ta) 3 W β€”
Package PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8 FL (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C -55Β°C to +150Β°C
MSL Level [DATA_NEEDED: MSL level] MSL1
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Series OptiMOS β€”
Drain-Source Voltage (VDS) β€” 40 V
Gate-Source Voltage (VGS) β€” Β±20 V
Continuous Drain Current (ID) @ TA=25Β°C β€” 33 A
Continuous Drain Current (ID) @ TC=25Β°C β€” 100 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance R DS(on) max @ VGS=10V β€” 1.45 mΞ©
R DS(on) typical @ VGS=10V β€” [DATA_NEEDED: RDS(on) typical]
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 115 W
Pin Count β€” 8

Datasheets & Resources

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