BSC019N04LSTATMA1 vs BSG0813NDIATMA1 Comparison
Detailed side-by-side comparison of BSC019N04LSTATMA1 by Infineon and BSG0813NDIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N04LSTATMA1
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 β ActiveInfineon
BSG0813NDIATMA1
BSG0813NDIATMA1 - 25V 19A/33A OptiMOS 5 Power Block | Infineon
BSG0813NDIATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N04LSTATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $1.05 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A | β |
| Continuous Drain Current (ID, Ta=25C) | 28 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | β |
| Total Gate Charge Qg typ | 85 nC | β |
| Power Dissipation PD (Tc=25C) | 94 W | β |
| Operating Temperature Range | -55 C to +150 C | [DATA_NEEDED: operating temperature range] |
| Package | TDSON-8 (SuperSO8) 5x6 mm | PG-TISON-8 (5.0 x 6.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Avalanche Rated | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 Power Block |
| FET Type | β | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Configuration | β | High-side + Low-side, integrated |
| Low-Side Continuous Drain Current (ID) | β | 19 A |
| High-Side Continuous Drain Current (ID) | β | 33 A |
| Power Dissipation (PD) | β | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| RDS(on) - Low-Side | β | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | β | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Technology Generation | β | OptiMOS 5 |
| Topology | β | Synchronous buck half-bridge |