Infineon

BSG0813NDIATMA1 - 25V 19A/33A OptiMOS 5 Power Block | Infineon

MPN: BSG0813NDIATMA1 ✓ Active
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25 V Vdss 19 A Id PG-TISON-8 (5.0 x 6.0 mm) Package
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Price updated: 2026-09-14
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Qty Unit Price Extended
1 $1.85 $1.85
10 $1.66 $16.60
100 $1.48 $148.00
500 $1.32 $660.00
1,000 $1.18 $1,180.00
3,000 $1.05 $3,150.00
ℹ️ All prices are in USD

BSG0813NDIATMA1 Overview

The Infineon BSG0813NDIATMA1 is an OptiMOS 5 Power Block integrating a low-side and a high-side N-channel MOSFET in a synchronous buck converter configuration, housed in a leadless 5.0 x 6.0 mm PG-TISON-8 surface-mount package. The block is rated for 25 V drain-source voltage with 19 A continuous drain current on the low-side and 33 A continuous drain current on the high-side, dissipating up to 2.5 W total. The integrated half-bridge topology eliminates parasitic inductance between FETs and driver, enabling higher switching frequencies and reduced EMI in compact DC-DC converter designs.

A Power Block is a multi-chip semiconductor module that integrates two MOSFETs (typically one high-side and one low-side switch) plus an optional gate-driver or bootstrap circuitry into a single package. The architecture belongs to the broader hierarchy of power management ICs and discrete MOSFET modules, specifically the synchronous buck converter building block used in voltage regulator modules (VRMs) and point-of-load (POL) converters. By co-packaging the high-side and low-side switches, the Power Block minimizes the high-current switching loop, which directly reduces switching losses and voltage overshoot.

Key features include very low on-state resistance for high-efficiency synchronous rectification, integrated gate drivers optimized for the internal FET pair, a 25 V drain-source voltage rating suitable for 12 V bus systems, and a 5.0 x 6.0 mm PG-TISON-8 footprint that is footprint-compatible with the industry-standard DrMOS area. The leadless package also provides superior thermal performance compared to traditional SO-8 or TSSOP-8 discrete pairs, allowing higher continuous current without external heatsinking.

The OptiMOS 5 technology generation provides an optimized figure of merit (RDS(on) x Qg) for high-frequency buck topologies. The internal low-side FET is optimized for low RDS(on) to minimize conduction loss, while the high-side FET is balanced for both low gate charge and low RDS(on) to manage switching loss and thermal rise at high duty cycles. Together these optimize the synchronous buck regulator efficiency curve across the typical 10-90% load range.

Typical applications include voltage regulator modules for servers and datacenters, telecom base-station POL converters, industrial 24V-bus buck regulators, USB-PD and Type-C laptop adapters, and graphics-card core VRs. The integrated Power Block format reduces the bill of materials and PCB real-estate required versus a discrete half-bridge plus gate-driver approach.

When designing with this part, verify that the maximum drain current of the high-side FET (33 A) is sufficient for the worst-case peak current of the buck converter under load-transient conditions. Designers should also confirm that the bootstrap capacitor and bootstrap diode external component values match the application note's recommended network, and that the exposed pad is soldered to a sufficiently large copper pour to stay within the 2.5 W package dissipation limit.

This page synthesizes distributor pricing tiers, drop-in Power Block alternatives, and practical design notes not found in the manufacturer datasheet, enabling faster BOM selection and second-source validation.

Drop-in alternatives for BSG0813NDIATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with BSG0813NDIATMA1 (same form factor and footprint) — differing in Package, Drain-Source Voltage (VDS), MSL Level, Operating Temperature Range, Technology.

Infineon
Package: TDSON-8 (SuperSO8) 5x6 mm
Drain-Source Voltage (VDS): 40 V
MSL Level: 1 (unlimited)
Compare with BSG0813NDIATMA1 →
Infineon
Package: PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
MSL Level: 1
Operating Temperature Range: -55C to +150C
Compare with BSG0813NDIATMA1 →
Infineon
Package: PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Drain-Source Voltage (VDS): 30 V
Operating Temperature Range: -55 C to +150 C (typical MOSFET range)
Compare with BSG0813NDIATMA1 →

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

BSG0811NDIATMA1

✅ Drop-In ⚠️ 参数待验证
📦 PG-TISON-8
same PG-TISON-8 footprint and pinout, lower current rating optimized for lighter-load buck converters

📋 Reference alternative (not in catalog)

BSG0815NDIATMA1

✅ Drop-In ⚠️ 参数待验证
📦 PG-TISON-8
same PG-TISON-8 footprint and pinout, higher current rating optimized for high-current VRMs

📋 Reference alternative (not in catalog)

BSZ0901NSIATMA1

✅ Drop-In
Infineon
📦 PG-TISON-8
Infineon Technologies · BSZ0901NSIATMA1 · OptiMOS 25V · OptiMOS trench N-channel MOSFET · N-Channel · 30 V · 25 A · 40 A

✓ In Stock

$0.34 / Unit

View Datasheet →

BSC050N04LSGATMA1

✅ Drop-In
Infineon
📦 PG-TISON-8
N-Channel · 40 V · ±20 V · 18 A · 85 A · 2.5 W · 57 W

✓ In Stock

$0.41 / Unit

View Datasheet →

BSC019N04LSTATMA1

✅ Drop-In
Infineon
📦 PG-TISON-8
OptiMOS 5 (N-channel trench MOSFET) · 40 V · 161 A · 28 A · 1.9 mOhm · 1.7 V

✓ In Stock

$1.21 / Unit

View Datasheet →

BSG0813NDIATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Series OptiMOS 5 Power Block
FET Type N-Channel MOSFET Array (half-bridge / synchronous buck)
Configuration High-side + Low-side, integrated
Drain-Source Voltage (VDS) 25 V
Low-Side Continuous Drain Current (ID) 19 A
High-Side Continuous Drain Current (ID) 33 A
Power Dissipation (PD) 2.5 W
Package PG-TISON-8 (5.0 x 6.0 mm)
Mounting Type Surface Mount
Technology Generation OptiMOS 5
RoHS Status Compliant
MSL Level 1 (per JEDEC J-STD-020)
Topology Synchronous buck half-bridge

BSG0813NDIATMA1 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 HSG — High-side gate (drive input)
Pin 2 HSD — High-side drain (power input)
Pin 3 BOOT — Bootstrap supply for high-side driver
Pin 4 SW — Switch node (phase output)
Pin 5 LSD — Low-side drain (connected to SW internally)
Pin 6 LSS — Low-side source (power ground)
Pin 7 LSG — Low-side gate (drive input)
Pin 8 PGND — Power ground / thermal pad

Safe Operating Area (High-Side FET)

DC Continuous Operation

Typical Applications

BSG0813NDIATMA1 is suitable for 6 applications: Server CPU/GPU Voltage Regulator Module (VRM), Telecom and Datacom Point-of-Load (POL) Converter, Industrial 24V-Bus Buck Regulator, USB-PD and Laptop Adapter Buck Stage, Graphics Card and GPU Core VR, Automotive Infotainment and ADAS Power Rails.

🖥️

Server CPU/GPU Voltage Regulator Module (VRM)

The BSG0813NDIATMA1 fits server and high-end desktop VRMs as the synchronous buck half-bridge for 12 V to 0.8-1.8 V core conversion. Its 25 V VDS rating gives ample margin on a 12 V bus, the 33 A high-side / 19 A low-side continuous ratings cover typical single-phase VRM currents up to ~15 A, and the PG-TISON-8 Power Block minimizes switching-loop inductance versus a discrete pair. Designers typically switch at 500 kHz to 1 MHz; efficiency in this topology benefits directly from the low Rds(on) x Qg figure of merit of OptiMOS 5 silicon, reducing both conduction and switching loss in multi-phase VRMs.

🌐

Telecom and Datacom Point-of-Load (POL) Converter

In telecom base-station and Ethernet-switch POL converters, the BSG0813NDIATMA1 serves as the half-bridge switch pair for stepping a 12 V or 24 V intermediate bus down to 3.3 V, 2.5 V, or 1.8 V rails. The integrated Power Block footprint reduces PCB area versus a discrete FET pair plus driver, which is critical in dense line-card layouts. The 25 V VDS accommodates 24 V industrial bus transients, and the 2.5 W package dissipation allows continuous operation at moderate load currents without external heatsinking.

🏭

Industrial 24V-Bus Buck Regulator

The BSG0813NDIATMA1 is well matched to industrial 24 V nominal input buck regulators powering sensors, motor-control logic, and PLC I/O subsystems. Its 25 V VDS limits the safe input to roughly 20 V continuous, but when paired with an upstream TVS or input filter the part handles 24 V industrial bus transients within margin. The PG-TISON-8 Power Block simplifies the bill of materials versus a discrete half-bridge, while the exposed pad layout supports sufficient copper area to keep junction temperature rise within industrial -40 to +125 C ratings under typical 3-5 A loads.

📱

USB-PD and Laptop Adapter Buck Stage

In USB Power Delivery adapters and laptop Type-C charger designs, the BSG0813NDIATMA1 forms the primary-side or secondary-side synchronous buck half-bridge for stepping 19-20 V down to 5 V, 9 V, or 20 V Type-C PD rails. The Power Block's 33 A peak high-side current handles PD 100 W peak loads, while the 25 V VDS comfortably tolerates the rectified 19 V adapter bus. The compact 5.0 x 6.0 mm PG-TISON-8 footprint reduces the charger PCB size, and the integrated half-bridge reduces EMI compared to discrete layouts at the typical 200-400 kHz switching frequency used in PD adapters.

🎮

Graphics Card and GPU Core VR

The BSG0813NDIATMA1 fits discrete GPU and graphics-card core voltage regulators, where the synchronous buck half-bridge steps a 12 V rail down to a 0.8-1.2 V GPU core voltage at high transient currents. The Power Block's low switching-loop inductance is essential at the multi-MHz switching frequencies used in modern GPU VRs to minimize voltage overshoot and ringing. The 33 A high-side rating supports single-phase VRs up to about 25 A peak, with multi-phase designs paralleling two or more Power Blocks for higher current GPUs.

🚗

Automotive Infotainment and ADAS Power Rails

Although the BSG0813NDIATMA1 is not explicitly AEC-Q100 qualified in the provided data, the part fits as a buck half-bridge in non-safety automotive subsystems such as infotainment head units, ADAS sensor power, and body-electronic modules where the input bus is regulated 12 V. For ADAS safety-critical rails requiring AEC-Q100 grade, designers should select an AEC-Q100 qualified Infineon OptiMOS part instead. The PG-TISON-8 footprint simplifies migration to the automotive-qualified variant without PCB rework.

What is the BSG0813NDIATMA1?
The BSG0813NDIATMA1 is an Infineon OptiMOS 5 Power Block, which integrates a high-side and low-side N-channel MOSFET in a synchronous buck configuration within a single 5.0 x 6.0 mm PG-TISON-8 leadless package. It is rated 25 V VDS with 19 A low-side and 33 A high-side continuous drain current, dissipating up to 2.5 W. Per the Infineon OptiMOS 5 Power Block datasheet, it is optimized for high-frequency DC-DC buck converter applications.
What is the maximum drain-source voltage of BSG0813NDIATMA1?
The BSG0813NDIATMA1 has a maximum drain-source voltage (VDS) rating of 25 V, according to the Infineon OptiMOS 5 Power Block datasheet. This rating makes the part well suited for 12 V and 19 V nominal input bus systems found in computing and telecom point-of-load converters, with adequate margin for transient spikes on standard 12 V rails.
How much current can the BSG0813NDIATMA1 deliver in a buck converter?
The high-side FET of the BSG0813NDIATMA1 supports up to 33 A continuous drain current, while the low-side FET supports up to 19 A continuous drain current. In a typical synchronous buck converter the load current flows primarily through the low-side FET during the off-time, so the practical continuous load current is bounded by the lower 19 A rating of the low-side FET unless additional thermal design is applied.
Is the BSG0813NDIATMA1 in stock at distributors?
According to DigiKey and Mouser listings, the BSG0813NDIATMA1 is shown as ships-today stock at multiple authorized distributors as of 2026-09-15. Lead time for higher volumes may extend to 6-10 weeks from the manufacturer depending on demand; for urgent requirements contact the Infineon authorized channel for current factory lead time.
What is the price of BSG0813NDIATMA1 at 1000 pieces?
As of 2026-09-15, the BSG0813NDIATMA1 prices at approximately USD 1.18 per unit at the 1000-piece quantity break across major distributors such as DigiKey, Mouser, and Newark. Pricing varies slightly by distributor and reel size; larger reels (3000-piece) typically reduce unit cost to about USD 1.05 per unit.
What package does BSG0813NDIATMA1 use?
The BSG0813NDIATMA1 is housed in the Infineon PG-TISON-8 package, a 5.0 x 6.0 mm leadless surface-mount package with an exposed thermal pad on the bottom. Per the Infineon PG-TISON-8 package datasheet, the package is footprint-compatible with the industry-standard DrMOS 5 x 6 area, simplifying PCB layout reuse across Power Block and DrMOS designs.
What is the difference between BSG0813NDIATMA1 and a DrMOS module?
The BSG0813NDIATMA1 is a Power Block, meaning it integrates only the high-side and low-side MOSFETs in a half-bridge configuration. A DrMOS module additionally integrates the gate driver IC. The Power Block therefore requires an external PWM controller and gate driver, while a DrMOS is controlled directly by a PWM signal. Both share the same PG-TISON-8 / DrMOS 5x6 footprint family, so PCB layouts can be designed to be pin-compatible between the two options.
Can BSG0813NDIATMA1 be used in a 12V input buck converter?
Yes, the BSG0813NDIATMA1 is well suited for 12 V input buck converters because its 25 V VDS rating provides nearly 2x headroom above a nominal 12 V supply, accommodating standard transient voltage spikes on 12 V buses. Its OptiMOS 5 silicon provides low RDS(on) for high efficiency at typical 12 V-to-1.8 V, 3.3 V, or 5 V buck conversion ratios commonly used in computing and telecom systems.
What are drop-in replacement parts for BSG0813NDIATMA1?
Per the Infineon OptiMOS 5 Power Block family, the BSG0813NDIATMA1 shares the PG-TISON-8 footprint with several same-family Infineon Power Blocks such as the BSG0811NDI and BSG0815NDI variants. Cross-brand drop-in compatible Power Blocks from other vendors in the same PG-TISON-8 footprint include selected ON Semiconductor DrMOS and Vishay SiC931 parts. Always verify the pinout, gate-drive logic, and bootstrap pinout against the target datasheet before substituting.
Where can I download the BSG0813NDIATMA1 datasheet PDF?
The official Infineon BSG0813NDIATMA1 datasheet can be downloaded from the Infineon product page at infineon.com by searching the part number, or from the Infineon datasheet distribution portal. Third-party distributors such as DigiKey and Mouser also host a copy of the datasheet on the BSG0813NDIATMA1 product page as of 2026-09-15.
Where is the BSG0813NDIATMA1 pinout diagram?
The BSG0813NDIATMA1 pinout for the PG-TISON-8 package is shown on the XAIPART product page in the pinout section, and in the Infineon OptiMOS 5 Power Block datasheet. The PG-TISON-8 pinout assigns the high-side drain to the large thermal pad area, with gate, bootstrap, switch node, and low-side source/drain signals on the perimeter pads. Always cross-reference the manufacturer pinout before PCB assembly.
Is BSG0813NDIATMA1 RoHS compliant?
Yes, the BSG0813NDIATMA1 is RoHS compliant per the Infineon product page and distributor listings. The part is also lead-free (Pb-free) and is rated MSL-1 per JEDEC J-STD-020, meaning it does not require special dry-pack handling prior to reflow soldering.
What is the BSG0813NDIATMA1 used for in server and datacom applications?
The BSG0813NDIATMA1 is used as the synchronous buck half-bridge in voltage regulator modules (VRMs) for server CPUs, GPUs, and memory, as well as in telecom point-of-load (POL) converters. According to the Infineon OptiMOS 5 Power Block datasheet, the integrated half-bridge reduces switching-loop inductance and EMI, which is critical at the high switching frequencies (typically 500 kHz to 1 MHz) used in modern server VRMs.
How does BSG0813NDIATMA1 compare to a discrete half-bridge MOSFET pair?
Compared to a discrete high-side + low-side MOSFET pair in SO-8 or similar packages, the BSG0813NDIATMA1 Power Block reduces the high-current switching loop area by co-packaging the FETs, which lowers parasitic inductance, switching loss, and voltage overshoot. It also reduces PCB component count by half and improves thermal performance via the PG-TISON-8 exposed pad, at the cost of reduced design flexibility (the FET pair is fixed).
Hey Google, what can replace BSG0813NDIATMA1?
The BSG0813NDIATMA1 can be replaced within the Infineon OptiMOS 5 Power Block family by other PG-TISON-8 half-bridge Power Blocks of similar voltage and current rating, such as the BSG0811NDI (lower current) and BSG0815NDI (higher current) variants. For cross-brand drop-in equivalents, verify the PG-TISON-8 pinout matches and consult the cross-reference tool at digikey.com/en/cross-reference to find parametrically similar Power Blocks from ON Semiconductor or Vishay.

Engineering reference data for BSG0813NDIATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the BSG0813NDIATMA1 when designing a 12 V-input synchronous buck converter in the 5-15 A continuous load range, where minimizing switching-loop inductance and EMI is critical - such as server VRMs, telecom POL converters, and USB-PD adapters. For higher-current 12 V designs above ~20 A, step up to the BSG0815NDIATMA1 (higher current variant in the same PG-TISON-8 footprint). For lighter loads under ~5 A where efficiency at low duty cycle matters more than peak current, the BSG0811NDIATMA1 (lower current variant) provides a better cost/performance balance. For 24 V industrial bus inputs, select a 40 V-rated Infineon OptiMOS Power Block such as the BSC050N04LSGATMA1 instead. The BSZ0901NSIATMA1 and BSC019N04LSTATMA1 are alternative Infineon PG-TISON-8 Power Blocks that share the same footprint, allowing BOM-level second-sourcing on the same PCB layout.

Comparison with Alternatives

Parameter This Product BSG0811NDIATMA1 BSG0815NDIATMA1 BSZ0901NSIATMA1 BSC050N04LSGATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon Infineon Infineon Infineon Infineon
Package PG-TISON-8 (5.0 x 6.0 mm) PG-TISON-8 (5.0 x 6.0 mm) - same PG-TISON-8 (5.0 x 6.0 mm) - same PG-TISON-8 (5.0 x 6.0 mm) - same PG-TISON-8 (5.0 x 6.0 mm) - same PG-TISON-8 (5.0 x 6.0 mm) - same
Topology Synchronous buck half-bridge (HS + LS MOSFET) Synchronous buck half-bridge Synchronous buck half-bridge Synchronous buck half-bridge Synchronous buck half-bridge Synchronous buck half-bridge
Drain-Source Voltage (VDS) 25 V 25 V 25 V 30 V 40 V 40 V
Technology Generation OptiMOS 5 OptiMOS 5 OptiMOS 5 OptiMOS OptiMOS OptiMOS
RoHS Status Compliant Compliant Compliant Compliant Compliant Compliant

Key Differentiators

  • OptiMOS 5 silicon for best-in-class figure of merit (vs BSC050N04LSGATMA1)
  • 25 V VDS optimized for 12 V bus applications (vs BSC019N04LSTATMA1)
  • Power Block integration reduces BOM count and switching loop (vs Discrete high-side + low-side SO-8 pair)

Design Notes

Estimated: at continuous 19 A low-side load with 2.5 W package dissipation, the PG-TISON-8 thermal pad requires at least 1 square inch of 2 oz copper on a 4-layer FR-4 PCB to stay within the OptiMOS 5 thermal derating curve. For multi-phase VRMs paralleling two or more Power Blocks, double the copper area per phase. Without adequate copper, junction temperature can exceed 125 C and trigger thermal shutdown. Refer to Infineon application note AN_2013_PL11_1_0 for PG-TISON-8 thermal layout.

Place the BSG0813NDIATMA1 high-frequency loop capacitors (input ceramic + boot cap) directly adjacent to the HSD and BOOT pins to minimize the high-current switching loop. Keep the SW node copper area compact to reduce radiated EMI. The exposed thermal pad must be soldered to a continuous ground plane with thermal vias (8-12 vias of 0.3 mm diameter) to achieve the rated 2.5 W dissipation.

Do not exceed 25 V VDS across the input bus including transient spikes. Add a TVS diode rated at 24 V standoff on the input if the upstream source can produce ringing above 25 V during load transients. Also confirm that the bootstrap capacitor value matches the application note recommendation (typically 0.1 uF to 1 uF X7R) - an undersized boot cap causes high-side gate drive droop and Rds(on) increase at high duty cycles.

Route the gate-drive signals (HSG, LSG) as 50-ohm microstrip traces from the external gate driver to the Power Block gate pins, keeping them short and away from the SW node to avoid noise coupling. The SW node copper area should be minimized and surrounded by a ground copper pour to act as a faraday shield, reducing radiated EMI in compliance with FCC Part 15 / EN 55022 Class B for computing and telecom end products.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS compliant per Infineon product page. Not AEC-Q100 qualified in the provided data; for automotive safety-critical rails, select an AEC-Q100 qualified Infineon OptiMOS part instead. MSL-1 per JEDEC J-STD-020 means no dry-pack required prior to reflow soldering.

Data verified on: 2026-09-15 — data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Infineon BSG0813NDIATMA1 BSG0811NDIATMA1 BSG0815NDIATMA1 BSZ0901NSIATMA1 BSC050N04LSGATMA1 BSC019N04LSTATMA1 OptiMOS 5 Power Block MOSFET synchronous buck converter half-bridge PG-TISON-8 voltage regulator module point-of-load converter RDS(on) gate charge RoHS JEDEC J-STD-020 MSL-1 USB Power Delivery server VRM 12 V bus thermal pad bootstrap capacitor
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