BSC019N04NSGATMA1 vs BSC014N04LSIATMA1 Comparison
Detailed side-by-side comparison of BSC019N04NSGATMA1 by Infineon and BSC014N04LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC019N04NSGATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.39 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS (trench) | OptiMOS 5 (trench, thin-wafer) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TA=25C | 30 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10V | 2.5 mΞ© | β |
| RDS(on) typ at VGS=10V | 1.9 mΞ© | β |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Power Dissipation (PD) at TC=25C | 125 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C |
| Package | PG-TDSON-8-1 (TDSON-8 FL) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc) | β | 100 A |
| Continuous Drain Current (ID, Ta) | β | 31 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | β | 96 W |
| Power Dissipation (PD, Ta) | β | 2.5 W |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Tradename | β | OptiMOS |