BSC019N04NSGATMA1 vs BSC022N04LS6ATMA1 Comparison
Detailed side-by-side comparison of BSC019N04NSGATMA1 by Infineon and BSC022N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
BSC022N04LS6ATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N04NSGATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.66 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS (trench) | OptiMOSβ’ 6 (N-channel trench) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TA=25C | 30 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| RDS(on) max at VGS=10V | 2.5 mΞ© | β |
| RDS(on) typ at VGS=10V | 1.9 mΞ© | β |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Power Dissipation (PD) at TC=25C | 125 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8-1 (TDSON-8 FL) | SuperSO8 5x6 (PG-TDSON-8-1) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Continuous Drain Current (ID) at Ta | β | 27 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Maximum Pulsed Drain Current (IDM) | β | 139 A |
| On-Resistance RDS(on) max | β | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 79 W |
| Channel Type | β | N-Channel |
| Pin Count | β | 8 |
| Operating Temperature | β | -55 C to +175 C (junction) |