BSC020N03LSGATMA1 vs BSC010N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC020N03LSGATMA1 by Infineon and BSC010N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC020N03LSGATMA1
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 β ActiveInfineon
BSC010N04LSATMA1
BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
BSC010N04LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC020N03LSGATMA1 | BSC010N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 28 A | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | β |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc=25C | 96 W | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +150C |
| Package / Case | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| Transistor Polarity | β | N-Channel |
| Drain-Source Breakdown Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | +/- 20 V |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Continuous Drain Current (ID, Ta=25C) | β | 38 A |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.0 mOhm |
| On-Resistance RDS(on) Test Condition | β | VGS = 10 V, ID = 50 A |
| Gate Threshold Voltage VGS(th) Typ | β | 2 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | β | 139 W |
| Power Dissipation (Ta=25C) | β | 2.5 W |
| Package | β | PG-TDSON-8 FL (SuperSO8 5x6) |
| RoHS / Halogen-Free | β | RoHS compliant, halogen-free |
| Technology | β | OptiMOS 5 |
| Avalanche Rated | β | 100% avalanche tested |