BSC020N03LSGATMA1 vs BSC011N03LSATMA1 Comparison
Detailed side-by-side comparison of BSC020N03LSGATMA1 by Infineon and BSC011N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC020N03LSGATMA1
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 β ActiveInfineon
BSC011N03LSATMA1
BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
BSC011N03LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC020N03LSGATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | 100 A (TC) |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | 1.0 V to 2.2 V (typ 1.6 V) |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | 1.1 mOhm (typ) |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc=25C | 96 W | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +150C |
| Package / Case | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| Product Series | β | OptiMOS 30V |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TA=25C | β | 37 A |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | β | 96 W |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Package | β | PG-TDSON-8-1 (SuperSO8) |