BSC020N03LSGATMA1 vs BSC050N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC020N03LSGATMA1 by Infineon and BSC050N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC020N03LSGATMA1
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 β ActiveInfineon
BSC050N03LSGATMA1
BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
BSC050N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC020N03LSGATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 28 A | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc=25C | 96 W | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55 C to +150 C |
| Package / Case | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| Part Number | β | BSC050N03LSGATMA1 |
| Technology | β | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 80 A |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | β | 5 mOhm |
| Power Dissipation (PD) at Tc | β | 50 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Package | β | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Channel Type | β | N-Channel |