BSC020N03LSGATMA1 vs BSZ065N03LSATMA1 Comparison
Detailed side-by-side comparison of BSC020N03LSGATMA1 by Infineon and BSZ065N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC020N03LSGATMA1
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 β ActiveInfineon
BSZ065N03LSATMA1
BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon
BSZ065N03LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC020N03LSGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 30V |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | β |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc=25C | 96 W | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +150C (junction) |
| Package / Case | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | PG-TSDSON-8-FL (S308) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25C | β | 12 A |
| Continuous Drain Current (ID) at TC=25C | β | 40 A |
| Power Dissipation (PD) at TA=25C | β | 2.1 W |
| Power Dissipation (PD) at TC=25C | β | 26 W |
| Configuration | β | Single N-Channel |
| Technology | β | Trench MOSFET (OptiMOS) |
| Gate Drive (typical) | β | 4.5 V |