BSC021N08NS5ATMA1 vs BSC059N04LS6ATMA1 Comparison
Detailed side-by-side comparison of BSC021N08NS5ATMA1 by Infineon and BSC059N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC059N04LS6ATMA1
BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon
BSC059N04LS6ATMA1 β ActiveSpecification Comparison
| Parameter | BSC021N08NS5ATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.74 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC021N08NS5ATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (V_DS max) | 80 V | β |
| Continuous Drain Current (I_D, Tc=25Β°C) | 226 A | β |
| Continuous Drain Current (I_D, Tc=100Β°C) | 100 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΞ© | β |
| Gate-Source Voltage V_GS max | Β±20 V | β |
| Power Dissipation P_D (Tc=25Β°C) | 214 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | SuperSO8 5x6 (PG-TSON-8-3) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Total Gate Charge Q_G typ | [DATA_NEEDED: total gate charge] | β |
| R_thJC thermal resistance max | [DATA_NEEDED: R_thJC] | β |
| RoHS Status | Compliant (Pb-free) | Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | β |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Delivery Form | Tape & Reel (T&R) | β |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25C | β | 17 A |
| Continuous Drain Current (ID) at TC=25C | β | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | β | 59 A |
| On-Resistance RDS(on) max | β | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | β | 3 W |
| Total Power Dissipation at TC=25C | β | 38 W |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Operating Temperature Range | β | -55C to +150C |
| Diode Continuous Forward Current (IS) | β | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | β | 236 A at TC=25C |
| Lead-Free | β | Yes |