BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon
MPN: BSC021N08NS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 5,000 | $0.81 | $4,050.00 |
BSC021N08NS5ATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the fundamental switching element of modern power electronics: a voltage-controlled three-terminal device in which the gate-source voltage modulates a conductive channel between drain and source. N-channel enhancement-mode power MOSFETs such as BSC021N08NS5ATMA1 form the high-side or low-side switch in DC-DC converters, motor drives, and load switches. OptiMOS 5 is Infineon's fifth-generation 80 V trench platform, offering the lowest R_DS(on) per die area in its class and benefiting from a low figure-of-merit that simultaneously reduces conduction and switching losses.
Key features include 80 V drain-source breakdown voltage, 2.1 mΩ maximum R_DS(on) at V_GS = 10 V, 226 A continuous drain current at case temperature 25 °C, ultra-low gate charge Q_G for fast switching, an avalanche-rated single-pulse body diode, 100 % R_G-tested gates for parallel operation, and Pb-free lead plating plus RoHS compliance. The SuperSO8 5x6 package exposes the drain tab as a thermal pad, achieving very low junction-to-case thermal resistance.
The OptiMOS 5 cell architecture uses a refined trench gate structure with an optimized epitaxial layer to balance on-resistance against switching charge. Compared with OptiMOS 3 predecessors, the FOM (R_DS(on) × Q_G) is reduced by roughly 50 %, enabling higher switching frequencies and smaller magnetics in telecom, server, and e-mobility DC-DC stages.
Typical applications include 48 V mild-hybrid DC-DC converters, telecom OR-ing and hot-swap controllers, server VRM and POL converters, synchronous rectification in telecom bricks, industrial motor drives, and USB-PD / eFuse battery protection paths. The combination of 80 V rating and very low R_DS(on) makes it ideal for systems where every milliohm of conduction loss compounds thermal stress.
When designing with this device, place gate-drive components within 5 mm of the gate pin to minimize parasitic loop inductance, and use a 10 V V_GS drive with Kelvin-source connection to fully exploit the low R_DS(on). Heatsink selection must account for the SuperSO8 thermal pad - a 1 oz copper pour of at least 6 cm² is the datasheet reference condition for the rated R_thJA.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet.
Drop-in alternatives for BSC021N08NS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC021N08NS5ATMA1 (same form factor and footprint) — differing in Package, Technology, RoHS Status, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC021N08NS5
✅ Drop-In📋 Reference alternative (not in catalog)
BSZ060NE2LSATMA1
✅ Drop-In✓ In Stock
$0.27 / Unit
View Datasheet →BSC0504NSIATMA1
✅ Drop-In✓ In Stock
Contact for price
View Datasheet →BSC014N06NSATMA1
✅ Drop-In✓ In Stock
$0.89 / Unit
View Datasheet →IPT007N06NATMA1
✅ Drop-In✓ In Stock
$2.84 / Unit
View Datasheet →BSC059N04LS6ATMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →BSC021N08NS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC021N08NS5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (V_DS max) | 80 V |
| Continuous Drain Current (I_D, Tc=25°C) | 226 A |
| Continuous Drain Current (I_D, Tc=100°C) | 100 A |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΩ |
| Gate-Source Voltage V_GS max | ±20 V |
| Power Dissipation P_D (Tc=25°C) | 214 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | SuperSO8 5x6 (PG-TSON-8-3) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (Pb-free) |
| MSL Level | MSL 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) |
| Delivery Form | Tape & Reel (T&R) |
BSC021N08NS5ATMA1 Pin Configuration
| Pin 1 | G — Gate - gate drive input |
| Pin 2 | S — Source - power source connection |
| Pin 3 | S — Source - power source connection |
| Pin 4 | S (Kelvin) — Source sense / Kelvin return for gate drive |
| Pin 5 | D — Drain - power drain connection (bonded to thermal pad) |
| Pin 6 | D — Drain - power drain connection (bonded to thermal pad) |
| Pin 7 | D — Drain - power drain connection (bonded to thermal pad) |
| Pin 8 | S — Source - power source connection |
| Pin PAD | D (Thermal Pad) — Drain / thermal pad - solder to PCB copper for cooling |
Safe Operating Area (DC, Tc=25°C, single pulse)
Typical Applications
BSC021N08NS5ATMA1 is suitable for 6 applications: 48 V Mild-Hybrid DC-DC Converter, Telecom OR-ing and Hot-Swap Controller, Server VRM and POL Converters, Synchronous Rectification in Telecom DC-DC Brick, Industrial Motor Drive (48 V BLDC/PMSM), Battery Protection and eFuse (48 V Battery Packs).
48 V Mild-Hybrid DC-DC Converter
The BSC021N08NS5ATMA1's 80 V V_DS and 2.1 mΩ R_DS(on) make it ideal for primary-side and secondary-side switches in 48 V mild-hybrid automotive DC-DC converters (e.g. 48 V to 12 V buck/boost stages). The 80 V rating leaves margin above the 48 V nominal rail, accommodating load-dump transients defined in LV148 and ISO 21780 standards. Its 226 A current rating supports power levels above 2 kW per switch in liquid-cooled 48 V systems, where conduction loss must be minimized to avoid derating the inverter. The SuperSO8 5x6 footprint and Kelvin-source pin enable high-frequency (200-500 kHz) switching without the gate ringing that plagues SO-8 parts. Per the Infineon OptiMOS 5 datasheet, the FOM (R_DS(on) × Q_G) of this part enables 2-3% efficiency gain versus OptiMOS 3 at the same frequency. Use as primary FET between 48 V bus and the high-frequency transformer primary.
Recommended
Telecom OR-ing and Hot-Swap Controller
In -48 V telecom rectifier OR-ing and hot-swap stages, the BSC021N08NS5ATMA1 acts as the low-loss series element that disconnects a failed supply from the paralleled bus. Its 80 V V_DS comfortably exceeds the -75 V transient window of ETSI EN 300 132-2 and provides additional margin for distribution surges, while the 2.1 mΩ R_DS(on) drops only ~50 mW at 5 A per MOSFET, eliminating the need for active cooling in a 1U shelf. The avalanche-rated body diode handles the bus-rail inductive kickback when the FET turns off during a current-sharing transient. Designers typically pair two of these in a common-drain OR-ing configuration with a TI LM5060 or LTC4217 hot-swap controller. Per Infineon datasheet, the 100% R_G-tested gate enables clean paralleling without oscillation.
Recommended
Server VRM and POL Converters
In high-current server VRM and POL (point-of-load) converters, the BSC021N08NS5ATMA1 serves as the synchronous rectifier on the 12 V or 48 V input side of buck converters delivering 100-300 A to CPUs and AI accelerators. The 226 A continuous drain current (at Tc=25 °C) supports very high phase counts per converter, while the 2.1 mΩ R_DS(on) at V_GS = 10 V directly translates to sub-1% conduction-loss contribution at full load, critical for 80+ Titanium and beyond efficiency targets. OptiMOS 5's low gate charge (Q_G) enables switching frequencies of 500 kHz-1 MHz, shrinking magnetics and improving transient response. Place the part on the bottom side of a 6-layer PCB with at least 6 cm² of 1 oz copper on the drain tab for the datasheet-referenced thermal performance.
Recommended
Synchronous Rectification in Telecom DC-DC Brick
The BSC021N08NS5ATMA1 is well suited as the synchronous rectifier MOSFET on the secondary side of an isolated telecom brick (e.g. 400 V to 48 V half-bridge LLC). The 80 V V_DS rating matches the rectified 48 V output plus reflection ripple and small overshoot from the transformer, while the 2.1 mΩ R_DS(on) at full gate drive yields synchronous-rectifier losses lower than a Schottky diode, improving overall brick efficiency by 1-2 percentage points. The avalanche-rated body diode simplifies dead-time control and tolerates reverse-recovery events. Per Infineon's OptiMOS 5 datasheet, the part's low Q_rr makes it superior to planar MOSFETs in hard-switched bridge legs, reducing cross-conduction losses during the 50-100 ns dead time.
Recommended
Industrial Motor Drive (48 V BLDC/PMSM)
In industrial 48 V BLDC and PMSM motor drives, the BSC021N08NS5ATMA1 functions as the low-side (and with two in half-bridge, both sides) FET of a three-phase inverter driving motors up to 5 kW. The 80 V V_DS handles the 48 V DC bus plus regenerative spike overshoot, while the 226 A rating provides ample margin for inrush and short-circuit events. The 2.1 mΩ R_DS(on) keeps conduction losses below 0.5% at 50 A RMS, enabling fan-less or sealed-housing designs. The SuperSO8 5x6 package with exposed thermal pad is footprint-compatible with major motor-driver reference designs from TI and Infineon, simplifying PCB migration between motor power ranges. Per Infineon's datasheet, the avalanche-energy rating supports the inductive-kickback energy of a stalled motor without external TVS clamps.
Recommended
Battery Protection and eFuse (48 V Battery Packs)
In 48 V battery-pack protection (eFuse, disconnect, and pre-charge circuits), the BSC021N08NS5ATMA1 acts as the high-current disconnect switch between the cells and the load. Its 80 V V_DS handles a fully-charged 48 V pack plus inductive kickback, and its 2.1 mΩ R_DS(on) contributes less than 100 mW of loss per FET at 7 A continuous, well below the dissipation budget of a sealed battery management enclosure. The avalanche-rated body diode supports the inrush from capacitive loads and pre-charge events without external protection. Pair with an AFE such as the BQ79656 for cell monitoring; the MOSFET sits between the B- terminal and the pack output. The 100% R_G-tested gate of the OptiMOS 5 part enables reliable parallel operation for higher-current packs.
Recommended
Recommended Products Summary
Engineering reference data for BSC021N08NS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC021N08NS5 | BSZ060NE2LSATMA1 | BSC0504NSIATMA1 | BSC014N06NSATMA1 | IPT007N06NATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | SuperSO8 5x6 (PG-TSON-8-3) | SuperSO8 5x6 (PG-TSON-8-3) - same | SuperSO8 5x6 (PG-TSON-8-3) - same | SuperSO8 5x6 (PG-TSON-8-3) - same | SuperSO8 5x6 (PG-TSON-8-3) - same | SuperSO8 5x6 (PG-TSON-8-3) - same | SuperSO8 5x6 (PG-TSON-8-3) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max | 80 V | 80 V | 60 V (-25%) | 40 V (-50%) | 60 V (-25%) | 60 V (-25%) | 40 V (-50%) |
| R_DS(on) max @ V_GS=10V | 2.1 mΩ | 2.1 mΩ (identical) | lower (60 V variant) | similar OptiMOS 5 R_DS(on) range | 1.4 mΩ (better) | 0.75 mΩ (much better) | 5.9 mΩ (worse) |
| Continuous Drain Current (Tc=25°C) | 226 A | 226 A | higher current (60 V variant) | different OptiMOS 5 silicon - check datasheet | similar high-current class | high-current class | lower current (40 V variant) |
| Technology Family | OptiMOS 5 | OptiMOS 5 (same) | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Pin-to-Pin Compatible | Yes (SuperSO8 5x6) | Yes - drop-in | Yes - drop-in | Yes - drop-in | Yes - drop-in | Yes - drop-in | Yes - drop-in |
| Delivery Form | Tape & Reel (ATMA1) | Bulk pack | Tape & Reel | Tape & Reel | Tape & Reel | Tape & Reel | Tape & Reel |
Key Differentiators
- Lowest R_DS(on) per die area in 80 V OptiMOS 5 family (vs BSZ060NE2LSATMA1)
- Identical silicon to BSC021N08NS5 with Tape & Reel packaging (vs BSC021N08NS5 (bulk))
- Higher V_DS rating than 60 V Infineon alternatives (vs BSC014N06NSATMA1)
Design Notes
Estimated: at continuous I_D = 100 A (Tc=100 °C rating) with R_DS(on) = 2.1 mΩ at 25 °C junction, conduction loss at this point is roughly 100 A × 100 A × 0.0021 Ω × 1.5 (R_DS(on) hot-factor) ≈ 31.5 W. The SuperSO8 5x6 thermal pad (drain tab) must be soldered to at least 6 cm² of 1 oz copper per Infineon's reference PCB; without this copper area the device will quickly exceed its 175 °C junction limit. For continuous >50 A operation, use forced airflow or attach a small heatsink via thermal interface material to the drain pad.
Place the gate-drive resistor and gate-source pull-down within 5 mm of pins 1 (G) and 4 (Kelvin S) to minimize the gate-drive loop inductance. The Kelvin source pin (pin 4) must be used as the gate-drive return - connecting the gate return to the power source (pin 2/3/8) instead creates a common-source inductance that can cause V_GS ringing and turn-on dv/dt-induced shoot-through. Use a 4-layer PCB with a solid ground plane beneath the part and stitch vias around the drain-pad copper pour to suppress thermal rise and provide a low-impedance return for switching currents.
Do not parallel more than two BSC021N08NS5ATMA1 units without individual gate resistors - although the 100% R_G-tested silicon helps, parasitic gate-source loop asymmetry can still cause high-frequency oscillation when four or more devices share a single gate driver. Use 1-10 Ω individual gate resistors for each paralleled FET. Also avoid V_GS transients beyond ±20 V; gate oxide breakdown is permanent. In applications with high dV/dt on the drain (e.g. hard-switched bridge legs), add a 10 kΩ gate-source resistor to prevent spurious turn-on from the Miller coupling capacitance C_GD × dV/dt.
Compliance Information
RoHS compliant per Infineon product page (EU Directive 2011/65/EU + 2015/863). Halogen-free per Infineon material declaration. AEC-Q100 automotive qualification status not stated in the verified web data - [DATA_NEEDED: AEC-Q100 grade] for full automotive use; for automotive designs check Infineon's automotive-grade catalog for an AEQ-qualified OptiMOS 5 variant.
