BSC021N08NS5ATMA1 vs IPT015N10N5ATMA1 Comparison
Detailed side-by-side comparison of BSC021N08NS5ATMA1 by Infineon and IPT015N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT015N10N5ATMA1
IPT015N10N5ATMA1 - 100V 300A 1.5mΞ© OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC021N08NS5ATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $2.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC021N08NS5ATMA1 | IPT015N10N5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOSβ’ 5 |
| Drain-Source Voltage (V_DS max) | 80 V | β |
| Continuous Drain Current (I_D, Tc=25Β°C) | 226 A | β |
| Continuous Drain Current (I_D, Tc=100Β°C) | 100 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΞ© | β |
| Gate-Source Voltage V_GS max | Β±20 V | β |
| Power Dissipation P_D (Tc=25Β°C) | 214 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | SuperSO8 5x6 (PG-TSON-8-3) | PG-HSOF-8-1 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| Total Gate Charge Q_G typ | [DATA_NEEDED: total gate charge] | β |
| R_thJC thermal resistance max | [DATA_NEEDED: R_thJC] | β |
| RoHS Status | Compliant (Pb-free) | Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | β |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Delivery Form | Tape & Reel (T&R) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID, Tc) | β | 300 A |
| On-Resistance RDS(on) Max | β | 1.5 mΞ© |
| Power Dissipation (PD, Tc) | β | 375 W |
| Configuration | β | Single |
| Operating Temperature | β | -55Β°C to +175Β°C |
| Gate Threshold VGS(th) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg at VGS=10V] |
| Output Capacitance (Coss) | β | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | β | Up to 43% reduction |
| Packaging | β | Tape & Reel |