BSC022N04LS6ATMA1 vs BSC019N04NSGATMA1 Comparison

Detailed side-by-side comparison of BSC022N04LS6ATMA1 by Infineon and BSC019N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC022N04LS6ATMA1

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 βœ“ Active
Infineon
BSC019N04NSGATMA1

BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon

BSC019N04NSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC022N04LS6ATMA1 BSC019N04NSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.58
Manufacturer Infineon Technologies β€”
Technology OptiMOSβ„’ 6 (N-channel trench) OptiMOS (trench)
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Ta 27 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
Maximum Pulsed Drain Current (IDM) 139 A β€”
On-Resistance RDS(on) max 2.2 mOhm at VGS=10 V β€”
Power Dissipation (Ta) 3 W β€”
Power Dissipation (Tc) 79 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-1) PG-TDSON-8-1 (TDSON-8 FL)
Mounting Type Surface Mount Surface Mount
Channel Type N-Channel β€”
Pin Count 8 β€”
Operating Temperature -55 C to +175 C (junction) β€”
RoHS Status Compliant Compliant
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at TC=25C β€” 100 A
Continuous Drain Current (ID) at TA=25C β€” 30 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10V β€” 2.5 mΞ©
RDS(on) typ at VGS=10V β€” 1.9 mΞ©
Gate-Source Threshold (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TA=25C β€” 2.5 W
Power Dissipation (PD) at TC=25C β€” 125 W
Operating Temperature Range β€” -55C to +150C

Datasheets & Resources

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