BSC022N04LS6ATMA1 vs BSC026N04LSATMA1 Comparison

Detailed side-by-side comparison of BSC022N04LS6ATMA1 by Infineon and BSC026N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC022N04LS6ATMA1

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 ✓ Active
Infineon
BSC026N04LSATMA1

BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΩ MOSFET | Infineon

BSC026N04LSATMA1 ✓ Active

Specification Comparison

Parameter BSC022N04LS6ATMA1 BSC026N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS™ 6 (N-channel trench) Trench-gate OptiMOS™ 5
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Ta 27 A
Continuous Drain Current (ID) at Tc 100 A
Maximum Pulsed Drain Current (IDM) 139 A
On-Resistance RDS(on) max 2.2 mOhm at VGS=10 V
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 79 W 63 W
Package SuperSO8 5x6 (PG-TDSON-8-1) PG-TDSON-8-6 (TDSON 5x6 mm)
Mounting Type Surface Mount Surface Mount
Channel Type N-Channel N-Channel
Pin Count 8
Operating Temperature -55 C to +175 C (junction)
RoHS Status Compliant Compliant
Part Family OptiMOS™ 5 N-Channel Power MOSFET
Gate-Source Voltage (VGS) max ±20 V
Continuous Drain Current (ID, Ta) 23 A
Continuous Drain Current (ID, Tc=25°C) 100 A
Pulsed Drain Current (IDM, Tc=25°C) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) typ @ VGS=10V 2.6 mΩ
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: max RDS(on)]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value]
Operating Temperature Range -55°C to +150°C

Datasheets & Resources

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