BSC022N04LS6ATMA1 vs BSC084P03NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC022N04LS6ATMA1 by Infineon and BSC084P03NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC022N04LS6ATMA1

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 βœ“ Active
Infineon
BSC084P03NS3GATMA1

BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon

BSC084P03NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC022N04LS6ATMA1 BSC084P03NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.24
Manufacturer Infineon Technologies β€”
Technology OptiMOSβ„’ 6 (N-channel trench) β€”
Drain-Source Voltage (VDS) 40 V -30 V
Continuous Drain Current (ID) at Ta 27 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
Maximum Pulsed Drain Current (IDM) 139 A β€”
On-Resistance RDS(on) max 2.2 mOhm at VGS=10 V β€”
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 79 W 69 W
Package SuperSO8 5x6 (PG-TDSON-8-1) PG-TDSON-8-5 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Channel Type N-Channel β€”
Pin Count 8 β€”
Operating Temperature -55 C to +175 C (junction) β€”
RoHS Status Compliant Compliant
Polarity / Channel Type β€” P-Channel
Continuous Drain Current (Ta) β€” 14.9 A
Continuous Drain Current (Tc) β€” 78.6 A
Rds(on) max @ VGS = -10 V β€” 6.1 mOhm
Rds(on) max @ VGS = -2.5 V β€” [DATA_NEEDED: Rds(on) at 2.5V]
Gate Threshold Voltage (VGS(th) typ) β€” -1.7 V
Total Gate Charge (Qg) β€” 58 nC @ VGS = -10 V
Input Capacitance (Ciss) β€” 3.19 nF
Output Capacitance (Coss) β€” 110 pF
Reverse Transfer Capacitance (Crss) β€” 1.52 nF
Operating Temperature Range β€” -55C to +150C
Technology Family β€” OptiMOS P3
MSL Level β€” 1 (unlimited)

Datasheets & Resources

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