BSC023N08NS5SCATMA1 vs BSC022N04LS6ATMA1 Comparison

Detailed side-by-side comparison of BSC023N08NS5SCATMA1 by Infineon and BSC022N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC022N04LS6ATMA1

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 βœ“ Active

Specification Comparison

Parameter BSC023N08NS5SCATMA1 BSC022N04LS6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.66
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC023N08NS5SCATMA1 β€”
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOSβ„’ 6 (N-channel trench)
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID, Tc=25Β°C) 202 A β€”
Power Dissipation (PD, Tc=25Β°C) 188 W β€”
On-State Resistance RDS(on) typ. 2.3 mΞ© at VGS=10 V, ID=50 A β€”
Gate Threshold Voltage VGS(th) typ. 3.8 V β€”
Total Gate Charge Qg 98 nC at VGS=10 V β€”
Input Capacitance Ciss 6.8 nF β€”
Output Capacitance Coss 74 pF β€”
Thermal Resistance RthJC 0.72 K/W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-WSON-8-2 (SuperSO8 DSC) SuperSO8 5x6 (PG-TDSON-8-1)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Continuous Drain Current (ID) at Ta β€” 27 A
Continuous Drain Current (ID) at Tc β€” 100 A
Maximum Pulsed Drain Current (IDM) β€” 139 A
On-Resistance RDS(on) max β€” 2.2 mOhm at VGS=10 V
Power Dissipation (Ta) β€” 3 W
Power Dissipation (Tc) β€” 79 W
Channel Type β€” N-Channel
Pin Count β€” 8
Operating Temperature β€” -55 C to +175 C (junction)

Datasheets & Resources

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