BSC023N08NS5SCATMA1 vs BSZ110N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC023N08NS5SCATMA1 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC023N08NS5SCATMA1 BSZ110N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.44
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC023N08NS5SCATMA1 β€”
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 N-Channel Power MOSFET
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 202 A β€”
Power Dissipation (PD, Tc=25Β°C) 188 W β€”
On-State Resistance RDS(on) typ. 2.3 mΞ© at VGS=10 V, ID=50 A β€”
Gate Threshold Voltage VGS(th) typ. 3.8 V β€”
Total Gate Charge Qg 98 nC at VGS=10 V β€”
Input Capacitance Ciss 6.8 nF β€”
Output Capacitance Coss 74 pF β€”
Thermal Resistance RthJC 0.72 K/W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-WSON-8-2 (SuperSO8 DSC) PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Part Family β€” OptiMOS 5
Drain-to-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) at Tc β€” 40 A
On-Resistance RDS(on) max β€” 11 mΞ©
Power Dissipation (PD) at Tc β€” 50 W
Polarity β€” N-Channel
Configuration β€” Single MOSFET
Gate Drive Voltage (VGS) β€” [DATA_NEEDED: VGS rating]
Operating Temperature Range β€” [DATA_NEEDED: operating temperature range]
MSL Level β€” [DATA_NEEDED: MSL level]

Datasheets & Resources

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