BSC023N08NS5SCATMA1 vs ISC080N10NM6ATMA1 Comparison
Detailed side-by-side comparison of BSC023N08NS5SCATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΞ© OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 β ActiveInfineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveSpecification Comparison
| Parameter | BSC023N08NS5SCATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC023N08NS5SCATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 202 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 188 W | β |
| On-State Resistance RDS(on) typ. | 2.3 mΞ© at VGS=10 V, ID=50 A | β |
| Gate Threshold Voltage VGS(th) typ. | 3.8 V | β |
| Total Gate Charge Qg | 98 nC at VGS=10 V | β |
| Input Capacitance Ciss | 6.8 nF | β |
| Output Capacitance Coss | 74 pF | β |
| Thermal Resistance RthJC | 0.72 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-WSON-8-2 (SuperSO8 DSC) | PG-TDSON-8 FL (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOSβ’ 6 100V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID) at Ta | β | 13 A |
| Continuous Drain Current (ID) at Tc | β | 75 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | β | 8.05 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 3.3 V at 36 Β΅A |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ max, per datasheet) |
| MSL Level | β | 1 (per JEDEC J-STD-020, per datasheet) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Qualification | β | Industrial grade (per Infineon OptiMOS 6 100V family) |