ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
MPN: ISC080N10NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.75 | $1.75 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.05 | $1,050.00 |
ISC080N10NM6ATMA1 Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal power switch belonging to the power-MOSFET family and the broader discrete-semiconductor category. In the system hierarchy, it sits below the power-management IC and above the passive component, serving as the active switching element in synchronous rectifiers, buck/boost stages, and motor-drive half-bridges. OptiMOS™ 6 devices specifically target 80-200 V rails and combine Infineon's thin-wafer technology with an optimized cell design to reduce gate charge and reverse-recovery charge.
Key differentiating features include a low typical RDS(on) of 8.05 mΩ at VGS=10 V, ID=20 A, a gate threshold around 3.3 V with 36 µA test condition, and an industry-standard TDSON-8 FL footprint that is pin-compatible with widely used 100 V/80 V power-SO-8 alternatives. The device is optimized for high switching frequency, allowing smaller magnetics in isolated and non-isolated DC-DC converters.
OptiMOS™ 6 uses Infineon's leading thin-wafer process, achieving a reduced figure-of-merit (FOM = RDS(on) × Qg) compared to OptiMOS™ 5. The exposed-drain pad of the TDSON-8 FL package provides a low thermal resistance path, supporting 100 W dissipation at the case with proper PCB copper area. This architecture suits both hard-switched and soft-switched topologies such as telecom rectifier stages, server VRMs, and solar micro-inverters.
Typical applications include 48 V telecom intermediate bus converters, server and datacom point-of-load converters, solar string inverters and micro-inverters, synchronous rectification in SMPS, brushless DC motor drives, and e-bike / battery-management power stages. The combination of low charge and low RDS(on) is especially attractive in high-frequency designs where switching loss dominates.
When designing with this MOSFET, ensure the gate driver can supply the peak gate current required to charge the input capacitance within the planned switching transition time. Place the gate-source resistor of 10-100 kΩ close to the IC to prevent inadvertent turn-on from dv/dt coupling on the boot strap node.
This page synthesizes distributor pricing, same-brand OptiMOS 6 family alternatives, and practical PCB thermal guidance not collated in the manufacturer datasheet alone.
Drop-in alternatives for ISC080N10NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC080N10NM6ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD33CN10NGATMA1
✅ Drop-In✓ In Stock
$0.32 / Unit
View Datasheet →BSC060N10NS3GATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC117N08NS5ATMA1
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →IPD034N06N3GATMA1
✅ Drop-In✓ In Stock
$0.51 / Unit
View Datasheet →ISC080N10NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 100 V |
| Continuous Drain Current (ID) at Ta | 13 A |
| Continuous Drain Current (ID) at Tc | 75 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA |
| Package | PG-TDSON-8 FL (TDSON EP) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55°C to +175°C (TJ max, per datasheet) |
| MSL Level | 1 (per JEDEC J-STD-020, per datasheet) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) |
ISC080N10NM6ATMA1 Pin Configuration
| Pin 1 | Source — Source (low-side connection) |
| Pin 2 | Source — Source (low-side connection) |
| Pin 3 | Source — Source (low-side connection) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source (low-side connection) |
| Pin 6 | Source — Source (low-side connection) |
| Pin 7 | Source — Source (low-side connection) |
| Pin 8 | Source — Source (low-side connection) |
| Pin EP | Drain (Exposed Pad) — Drain connection; thermal pad for heat dissipation |
Safe Operating Area
Typical Applications
ISC080N10NM6ATMA1 is suitable for 6 applications: 48V Telecom Intermediate Bus Converter, Server and Datacom Point-of-Load Converters, Solar String Inverter and Micro-Inverter, Synchronous Rectification in SMPS, Brushless DC Motor Drive, E-Bike and Battery Management Power Stage.
48V Telecom Intermediate Bus Converter
The ISC080N10NM6ATMA1 is purpose-built for the synchronous-rectifier (SR) FET in 48 V-input telecom IBCs converting to 12 V or 5 V at 250-500 kHz. Its 100 V VDS rating comfortably exceeds the 48 V nominal plus transients (per ETSI EN 300 132-2), and the OptiMOS™ 6 thin-wafer process delivers low Qrr that suppresses body-diode reverse-recovery spikes in the SR stage. RDS(on) of 8.05 mΩ at 10 V VGS keeps conduction loss at ~6 W for a 30 A SR, leaving substantial thermal headroom. Compared to OptiMOS™ 5, switching loss drops 30-40% at the same drive conditions, enabling higher power density. Place the gate-source 10 kΩ resistor directly at the gate pad to suppress Miller-induced turn-on in the half-bridge.
Recommended
Server and Datacom Point-of-Load Converters
In 48 V-to-PoL converters for hyperscale datacom (e.g., Open Rack V3 bus-bar architectures), the ISC080N10NM6ATMA1 serves as the primary-side high-side FET in a two-stage buck or as the SR FET in a resonant LLC. The combination of 100 V VDS, low Qg, and 8.05 mΩ RDS(on) supports 600-1200 W converter stages switching at 300 kHz with peak efficiency above 97%. The TDSON-8 FL exposed-drain pad enables direct top-side cooling via thermal vias to an internal copper plane, critical for 1U rack-density designs where airflow is constrained. For 1500-3000 W designs, parallel two ISC080N10NM6ATMA1 with source-side 0.5 mΩ balancing resistors.
Recommended
Solar String Inverter and Micro-Inverter
The ISC080N10NM6ATMA1 fits the boost PFC and full-bridge stages of 1500 VDC-string solar inverters and the high-frequency link of micro-inverters. Its 100 V VDS rating covers the 60-80 VDC rectified bus typical of residential PV micro-inverters, and OptiMOS™ 6's low Qrr minimizes reverse-recovery loss in the hard-switched boost stage. The 75 A pulsed rating supports the inrush of the input capacitor bank during cold-start. Designers typically pair it with a SiC diode on the boost diode position for maximum efficiency above 50 kHz. AEC-Q100 qualification is NOT held - this part is industrial-grade and not for automotive PV inverter ECUs.
Recommended
Synchronous Rectification in SMPS
In 90-265 VAC-input offline SMPS with 12 V/24 V/48 V outputs, the ISC080N10NM6ATMA1 replaces Schottky diodes on the secondary-side synchronous-rectifier position to recover the diode forward-voltage loss. At a 5 V/30 A output, replacing two 30 V Schottky diodes with two parallel ISC080N10NM6ATMA1 typically saves 4-6 W and improves efficiency by 1.5-2.5%. The 100 V VDS rating supports 24 V-output converters with wide tolerance and transient load-dump conditions. Use a dedicated SR controller (e.g., NCP4306) for adaptive turn-off timing to avoid shoot-through and to optimize the body-diode conduction window.
Recommended
Brushless DC Motor Drive
The ISC080N10NM6ATMA1 functions as the low-side FET in 3-phase brushless DC (BLDC) motor drives for industrial pumps, fans, e-bike traction inverters up to 48 V, and small EV auxiliary drives. Its 13 A continuous TA rating supports 200-400 W motors, while the 75 A TC rating accommodates peak torque transients during acceleration. The 8.05 mΩ RDS(on) keeps conduction loss low enough that 4-layer PCB FR4 copper can dissipate the 100 W Tc rating with adequate thermal vias. Pair with a 3-phase gate driver such as the Infineon 6EDL04I06NT or BTN7971B for integrated bootstrap and protection.
Recommended
E-Bike and Battery Management Power Stage
In 36 V / 48 V e-bike controller power stages and 48 V battery-management protection FETs, the ISC080N10NM6ATMA1 provides efficient switching with its 100 V VDS rating headroom and 8.05 mΩ RDS(on). The OptiMOS™ 6 thin-wafer design minimizes conduction loss during cruise, extending range by 2-4% compared to older OptiMOS™ 3 generations. The 75 A TC rating comfortably covers the 20-30 A peak assist current of pedal-assist e-bikes. For BMS high-side protection, its low Qg enables fast disconnect in <2 µs when paired with a TI BQ76200 or similar AFE, providing short-circuit protection within a single PWM cycle.
Recommended
Recommended Products Summary
Engineering reference data for ISC080N10NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD33CN10NGATMA1 | BSC060N10NS3GATMA1 | BSC117N08NS5ATMA1 | IPD034N06N3GATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Family / Generation | OptiMOS 6 100V | OptiMOS 3 100V | OptiMOS 3 100V | OptiMOS 5 80V | OptiMOS 3 60V |
| VDS Max (V) | 100 | 100 | 100 | 80 | 60 |
| RDS(on) Typ (mΩ) at VGS=10V | 8.05 | 33 | 6 | 11.7 | 3.4 |
| Power Dissipation (W) at TA=25°C | 3 | 3 (same family) | 3 (same family) | 3 (same family) | 3 (same family) |
| Switching Frequency Suitability | High (OptiMOS 6 thin wafer) | Lower (OptiMOS 3, higher Qg) | Lower (OptiMOS 3, higher Qg) | Medium (OptiMOS 5) | Lower (OptiMOS 3, higher Qg) |
Key Differentiators
- OptiMOS™ 6 thin-wafer process delivers lower Qg and Qrr vs OptiMOS™ 3 (vs IPD33CN10NGATMA1)
- Lower RDS(on) than OptiMOS™ 5 in the same footprint (vs BSC117N08NS5ATMA1)
- Higher VDS rating with comparable RDS(on) (vs IPD034N06N3GATMA1)
Design Notes
Estimated: at ID=13 A continuous on a 1 sq-inch 1 oz copper FR4 PCB, the TDSON-8 FL package dissipates approximately 1.4 W (13 A squared x 8.05 mΩ) into the exposed drain pad, requiring thermal vias (12-16 vias, 0.3 mm drill, 1 oz plating) to an internal copper plane. Without vias, junction temperature can exceed 150°C at 25°C ambient within minutes. For continuous operation above 20 A, place at least 1 sq-inch of top-side copper and 2 oz inner-plane copper under the exposed pad. Forced airflow of 1-2 m/s reduces RthJA by ~30%.
Keep the high-side and low-side FETs of a half-bridge within 5 mm of each other to minimize power-loop inductance. Place the gate-loop return (gate-drive IC ground to FET source) within 3 mm using a kelvin-source connection where possible. Use a 10-100 kΩ gate-source resistor to prevent Miller-induced turn-on during fast dv/dt transitions on the phase node. Per Infineon AN_201702_PL11_008, source-bond inductance above 1 nH can cause VGS spikes of 5-8 V at turn-off in 100 V designs.
Do not exceed VGS of +/-20 V (absolute maximum per OptiMOS 6 datasheet); a 12 V gate drive with a 10 kΩ gate resistor is the safe operating range. Do not parallel two ISC080N10NM6ATMA1 without source-balancing inductors or resistors of 0.5-1 mΩ, as RDS(on) positive temperature coefficient alone is insufficient to balance current at high di/dt. Finally, do not use ISC080N10NM6ATMA1 in circuits that exceed 100 VDS even transiently; avalanche breakdown can occur within nanoseconds and permanently damage the device.
Compliance Information
RoHS compliant per LCSC listing C3288845 and DigiKey product page. Not AEC-Q100 qualified - industrial grade only per Infineon OptiMOS 6 100V family datasheet. Halogen-free per Infineon product family specification.
