BSC027N04LSGATMA1 vs IAUC120N06S5L032ATMA1 Comparison
Detailed side-by-side comparison of BSC027N04LSGATMA1 by Infineon and IAUC120N06S5L032ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveInfineon
IAUC120N06S5L032ATMA1
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N04LSGATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS 5 (60 V) |
| Transistor Type | N-Channel MOSFET | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 24 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΞ© | β |
| Power Dissipation (Ta=25Β°C) | 2.5 W | β |
| Power Dissipation (Tc=25Β°C) | 83 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55 C to +175 C (T_j) |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-34 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS 5 Trench |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Drain-to-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D, T_j) | β | 120 A |
| R_DS(on) Max (V_GS = 10 V) | β | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | β | 94 W |
| AEC-Q101 Qualified | β | Yes |
| Gate Threshold Voltage V_GS(th) | β | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | β | [DATA_NEEDED: Q_G total at V_GS=10V] |