BSC027N04LSGATMA1 - 40V 100A 2.7mΩ OptiMOS 3 N-MOSFET | Infineon
MPN: BSC027N04LSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.98 | $9.80 |
| 100 | $0.82 | $82.00 |
| 500 | $0.71 | $355.00 |
| 1,000 | $0.62 | $620.00 |
| 5,000 | $0.54 | $2,700.00 |
BSC027N04LSGATMA1 Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled power switch in which a positive gate-source voltage creates an n-type conduction channel between drain and source. The OptiMOS 3 family belongs to the hierarchy power MOSFET -> discrete semiconductor -> transistor -> semiconductor, and is engineered for synchronous rectification, DC-DC conversion, and high-frequency switching power stages where low conduction loss, low gate charge, and small footprint are required.
Key features include an industry-leading 2.7 mΩ maximum RDS(on) at VGS=10 V, low gate charge (Qg) optimized for high-frequency operation, a logic-level-compatible gate drive threshold, and an exposed-drain SuperSO8 5x6 pad that reduces thermal resistance to the PCB. The TDSON-8 footprint is shared across the OptiMOS 3 family, giving designers a uniform PCB land pattern for migration between current and voltage grades.
The device is built on Infineon's trench MOSFET process, which minimizes cell pitch and maximizes silicon utilization to deliver class-leading figure-of-merit (FOM = RDS(on) × Qg). The integrated Schottky-like body diode and dv/dt ruggedness further simplify use in half-bridge and synchronous buck topologies.
Typical applications include synchronous rectification in 12 V buck converters for server and telecom POL rails, OR-ing and hot-swap switches on 24 V industrial buses, motor drive H-bridges in 12 V/24 V brushless DC fans and tools, battery protection circuits in 4S-10S Li-ion packs, and USB-PD / Type-C high-current load switches.
When designing with the BSC027N04LSGATMA1, place it on a copper pour of at least 25 mm² per side to keep junction temperature within SOA, and use a 10 V VGS drive to achieve the published 2.7 mΩ RDS(on). Avoid operating continuously near the 100 A Tc limit - derate to roughly 50-60 % of that figure in space-constrained layouts to preserve long-term reliability.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for BSC027N04LSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC027N04LSGATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Junction Temperature, MSL Level, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC027N04LSGATMA
✅ Drop-In📋 Reference alternative (not in catalog)
BSC059N04LS6ATMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →BSC021N08NS5ATMA1
✅ Drop-In✓ In Stock
$0.81 / Unit
View Datasheet →BSC0504NSIATMA1
✅ Drop-In✓ In Stock
Contact for price
View Datasheet →IAUC120N06S5L032ATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IPT007N06NATMA1
✅ Drop-In✓ In Stock
$2.84 / Unit
View Datasheet →BSC027N04LSGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Continuous Drain Current (ID) at Ta=25°C | 24 A |
| Continuous Drain Current (ID) at Tc=25°C | 100 A |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΩ |
| Power Dissipation (Ta=25°C) | 2.5 W |
| Power Dissipation (Tc=25°C) | 83 W |
| Operating Temperature Range | -55°C to +150°C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 3 (Trench) |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
BSC027N04LSGATMA1 Pin Configuration
| Pin 1 | Drain — Drain connection (exposed pad, also serves as thermal pad) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
Safe Operating Area (DC)
Typical Applications
BSC027N04LSGATMA1 is suitable for 6 applications: 12 V Synchronous Rectifier in Buck Converters, 24 V Hot-Swap and OR-ing Switch, Brushless DC Motor Drive (12-24 V), Battery Protection and Load Switch (Multi-Cell Li-ion), USB-PD and Type-C High-Current Load Switch, Telecom and Server 48 V Intermediate Bus Converter.
12 V Synchronous Rectifier in Buck Converters
The BSC027N04LSGATMA1 is the canonical low-side synchronous rectifier for 12 V-input, 20-40 A buck converters powering server and telecom POL rails. Its 2.7 mΩ RDS(on) at VGS=10 V produces conduction losses of roughly 1.1 W at 20 A and under 110 mW at 10 A, while the low Qg (typically < 50 nC) keeps switching losses well below 1 % at 500 kHz. Per the Infineon OptiMOS 3 application note, mount the SuperSO8 pad on at least 25 mm² of top-side copper to keep Tj below 100°C at continuous full load. This combination of low FOM and compact footprint enables > 96 % peak efficiency in a half-bridge layout paired with a TI TPS54335 or Infineon IFX91041 controller.
Recommended
24 V Hot-Swap and OR-ing Switch
The BSC027N04LSGATMA1 serves as a low-side hot-swap switch on 24 V industrial distribution buses, where its 40 V VDS rating provides 60 % headroom above the nominal bus and its 100 A Tc rating supports inrush currents that would exceed the steady-state load. A typical circuit places the MOSFET in the return path with a gate-drive charge pump, current-sense resistor, and an upstream eFuse controller for retry-able fault handling. Designers should add a TVS such as SMBJ6.0CA on the drain to clamp inductive ringing below the 40 V abs-max during disconnect events.
Recommended
Brushless DC Motor Drive (12-24 V)
In 12-24 V brushless DC (BLDC) fan, pump, and power-tool drives, the BSC027N04LSGATMA1 is used on the low-side of each half-bridge phase leg, paired with a complementary P-FET or N-FET on the high side. Its 100 A peak Tc rating handles motor stall currents up to 10x steady-state without tripping, while the 2.7 mΩ RDS(on) keeps I²R losses under 3 W per leg at 30 A continuous - well within the 83 W Tc-rated dissipation envelope. Infineon's reference designs use the SuperSO8 5x6 footprint with a 4-layer PCB to keep junction rise below 50°C at full torque.
Recommended
Battery Protection and Load Switch (Multi-Cell Li-ion)
The BSC027N04LSGATMA1 acts as a low-side load switch and reverse-polarity protection element in 4S-10S Li-ion battery packs (up to 36 V at full charge). Its 40 V abs-max safely exceeds the 4S-10S maximum charging voltage of 16.8-42 V, while the low 2.7 mΩ RDS(on) minimizes voltage drop across the switch at 20 A discharge - keeping pack-level efficiency above 99 %. The MOSFET's avalanche rating also tolerates the inductive kick from motor or converter loads when the pack is disconnected under load.
Recommended
USB-PD and Type-C High-Current Load Switch
For USB Power Delivery (PD) and Type-C 5 V/9 V/15 V/20 V load switches that must handle 5 A continuous and 100 W peak, the BSC027N04LSGATMA1 provides a compact, low-loss VBUS switch when paired with a back-to-back configuration or a single N-FET with charge pump. Its 40 V rating covers the 20 V PD profile with comfortable headroom, while 2.7 mΩ RDS(on) limits steady-state drop to 14 mV at 5 A - well below the USB-PD cable-loss budget. The SuperSO8 5x6 footprint allows the switch to be placed directly at the Type-C connector.
Recommended
Telecom and Server 48 V Intermediate Bus Converter
Although rated 40 V, the BSC027N04LSGATMA1 is used on the low-voltage secondary of 48 V-to-12 V intermediate bus converters (IBC) in telecom and hyperscale server platforms, where it switches the 12 V secondary at high frequency. In this role its low Qg and 2.7 mΩ RDS(on) enable > 97 % efficiency at 1 MHz with a footprint under 30 mm² per phase. Designers typically parallel two devices to halve conduction loss, taking advantage of the OptiMOS 3 family thermal-sharing characteristics in PG-TDSON-8.
Recommended
Recommended Products Summary
Engineering reference data for BSC027N04LSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC027N04LSGATMA | BSC059N04LS6ATMA1 | BSC021N08NS5ATMA1 | BSC0504NSIATMA1 | IAUC120N06S5L032ATMA1 | IPT007N06NATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 80 V | 30 V | 60 V | 60 V |
| On-Resistance RDS(on) max | 2.7 mΩ | 2.7 mΩ | 5.9 mΩ | 2.1 mΩ | 5.0 mΩ | 3.2 mΩ | 0.75 mΩ |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS | OptiMOS 5 | OptiMOS 5 |
| Unit Price (qty 1, USD) | 1.12 | 1.12 | 0.85 | 1.65 | 0.78 | 1.45 | 2.10 |
Key Differentiators
- Lowest RDS(on) per mm² in its 40 V OptiMOS 3 family (vs BSC059N04LS6ATMA1)
- 40 V rating is optimal for 12 V/24 V bus designs (vs BSC021N08NS5ATMA1)
- Higher voltage headroom than 30 V alternatives (vs BSC0504NSIATMA1)
Design Notes
Estimated: At continuous ID=50 A with RDS(on)=2.7 mΩ, the device dissipates P = I² × RDS(on) = 50² × 0.0027 = 6.75 W. Using a 25 mm² top-side copper pour on a 4-layer 1 oz PCB, theta_JA is roughly 50 °C/W, giving a junction rise of ~338 °C above ambient - which is non-survivable. To stay within the 150 °C Tj max, derate steady-state current to roughly 25 A on PCB-only mounting, or attach an external heatsink/spreader to drop theta_JA to 20 °C/W (allowing ~50 A continuous). The PG-TDSON-8-1 exposed drain pad is the primary thermal path - solder it directly to a continuous copper plane with thermal vias to inner layers.
Place the BSC027N04LSGATMA1 as close as possible to the switching controller to minimize the gate-drive loop area. Use a 4-layer stack-up with the source pad on the top layer returning to a solid ground plane on layer 2 to reduce source inductance - this prevents dv/dt-induced false turn-on of the synchronous FET. Thermal vias (12-16, 0.3 mm diameter) under the exposed pad are recommended to spread heat to inner copper layers. Per the Infineon layout guideline, keep the high-side and low-side FET loop area under 100 mm² for a 1 MHz switching node.
Do not drive VGS above the ±20 V abs-max rating - a typical 12 V gate drive is the safe maximum, with 10 V recommended for optimal RDS(on). Never operate the device in linear mode (VDS between 1-5 V with significant ID) without verifying SOA; sustained linear operation will quickly exceed thermal limits. Ensure the gate-source resistor is at least 10 kΩ to prevent floating-gate turn-on during controller startup. Finally, derate VDS by 20 % for industrial designs to handle repetitive avalanche from inductive loads such as motors and transformers.
Compliance Information
RoHS and REACH compliant per Infineon product page. Halogen-free per MSL-1 rating. AEC-Q100 not explicitly qualified - select automotive-grade variants from Infineon OptiMOS 3 family if required.
