BSC027N04LSGATMA1 vs IPB038N12N3GATMA1 Comparison
Detailed side-by-side comparison of BSC027N04LSGATMA1 by Infineon and IPB038N12N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β Active
Specification Comparison
| Parameter | BSC027N04LSGATMA1 | IPB038N12N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS 120V |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 24 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΞ© | β |
| Power Dissipation (Ta=25Β°C) | 2.5 W | β |
| Power Dissipation (Tc=25Β°C) | 83 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +175C (junction) |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS trench MOSFET |
| MSL Level | 1 | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 120 V |
| Continuous Drain Current (Id) @ Tc | β | 120 A |
| Power Dissipation (Pd) @ Tc | β | 300 W |
| On-State Resistance (Rds(on)) | β | 3.8 mOhm (typical) |
| Package / Case | β | PG-TO263-3 (D2PAK) |
| Gate Drive | β | Logic-level compatible |
| Standard Package Quantity | β | 1000 (Tape & Reel) |
| Avalanche Rated | β | Yes |