BSC027N10NS5ATMA1 vs BSC040N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC027N10NS5ATMA1 by Infineon and BSC040N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
BSC027N10NS5ATMA1 NrndInfineon
BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
BSC040N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N10NS5ATMA1 | BSC040N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.10 | $1.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | BSC040N08NS5ATMA1 |
| Technology | OptiMOS 5 (100V) | OptiMOS 5 (N-channel trench MOSFET) |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 80 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at Ta | 23 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | 194 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 214 W | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | β |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | β | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | β | 4 mOhm |
| Power Dissipation (Ta=25C, 1inΒ² PCB) | β | 2.5 W |
| Power Dissipation (Tc=25C) | β | 104 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Primary Application | β | Synchronous rectification in telecom and server power supplies |