BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
MPN: BSC040N08NS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.42 | $24.20 |
| 100 | $1.95 | $195.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.38 | $1,380.00 |
| 3,000 | $1.15 | $3,450.00 |
BSC040N08NS5ATMA1 Overview
A power MOSFET is a voltage-controlled three-terminal switch used to commutate current in switching power supplies, motor drives, and load-management circuits. The N-channel enhancement-mode variant (the dominant topology in modern SMPS) requires a positive gate-source voltage to turn on and conducts current from drain to source. Within the power-semiconductor hierarchy, MOSFETs sit alongside IGBTs and GaN FETs in the discrete-switch family, with silicon MOSFETs such as this OptiMOS 5 part dominating the sub-200 V, sub-100 A segment thanks to mature process technology, wide driver ecosystem, and excellent ruggedness.
Key specifications of the BSC040N08NS5ATMA1 include 4 mOhm maximum RDS(on) at VGS = 10 V, an avalanche-rated 100 A continuous drain current at 25 C case temperature, 2.5 W power dissipation on a 1 in² FR4 PCB at 25 C, 104 W power dissipation with case-temperature control, and an operating junction temperature range from -55 C to +175 C. The PG-TDSON-8-7 package features an exposed drain tab that doubles as a thermal pad, allowing direct copper cooling through the PCB.
Built on Infineon's advanced OptiMOS 5 trench process, the device achieves low figure-of-merit (FOM = RDS(on) × Qg) by combining a small die with optimized cell pitch. This makes the part equally attractive for high-frequency LLC resonant converters and hard-switched buck stages at 300 kHz to 1 MHz, where gate-drive losses and output charge dominate efficiency curves. The SuperSO8 5x6 footprint is JEDEC-standard, enabling drop-in PCB layout reuse across the OptiMOS 5 family.
Typical applications include 48 V telecom bus synchronous-rectifier MOSFETs in isolated DC-DC converters, server CRPS and OCP power-supply secondary-side rectifiers, 24 V to 12 V buck converters for industrial automation, hot-swap and OR-ing circuits in distributed power, and high-current brushless-DC motor drivers. The low RDS(on) × Qg figure-of-merit also suits battery-management systems where conduction loss and switching loss together determine thermal rise.
When designing with this part, ensure the gate-driver can source and sink the specified peak gate current and that a sufficiently low-impedance Kelvin connection is provided to the source pad (pin 2). For full 104 W dissipation, a heat spreader or direct case cooling is required; PCB copper alone will not sustain 100 A continuously without significant derating.
This page synthesizes distributor stock data, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet alone, giving engineers a single consolidated reference for sourcing, comparing, and applying the BSC040N08NS5ATMA1.
Drop-in alternatives for BSC040N08NS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC040N08NS5ATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Power Dissipation (Tc).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC040N10NS5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.93 / Unit
View Datasheet →BSC052N08NS5ATMA1
✅ Drop-In✓ In Stock
$0.52 / Unit
View Datasheet →BSZ110N08NS5ATMA1
✅ Drop-In✓ In Stock
$0.4423 / Unit
View Datasheet →BSC093N15NS5ATMA1
✅ Drop-In✓ In Stock
$1.83 / Unit
View Datasheet →BSC0902NSATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC040N08NS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC040N08NS5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm |
| Power Dissipation (Ta=25C, 1in² PCB) | 2.5 W |
| Power Dissipation (Tc=25C) | 104 W |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55 C to +175 C |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Primary Application | Synchronous rectification in telecom and server power supplies |
BSC040N08NS5ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (power return) |
| Pin 2 | Source (Kelvin) — Kelvin source - connect gate-driver return here for clean switching |
| Pin 3 | Source — Source connection (power return) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain connection (common with exposed tab) |
| Pin 6 | Drain — Drain connection (common with exposed tab) |
| Pin 7 | Drain — Drain connection (common with exposed tab) |
| Pin 8 | Drain — Drain connection (common with exposed tab) |
Typical Applications
BSC040N08NS5ATMA1 is suitable for 6 applications: 48 V Telecom Synchronous Rectifier, Server CRPS / OCP Power Supply Secondary Side, 24 V Industrial Buck Converter, Hot-Swap and OR-ing Circuit, High-Current BLDC Motor Drive, Battery Management System (BMS) Discharge Path.
48 V Telecom Synchronous Rectifier
The BSC040N08NS5ATMA1 is purpose-built for synchronous rectification on the secondary side of isolated 48 V telecom DC-DC converters. Its 4 mOhm RDS(on) at VGS = 10 V and OptiMOS 5 figure-of-merit minimize both conduction loss and switching loss at the 100 kHz to 500 kHz switching frequencies typical of LLC and full-bridge topologies, directly lifting overall converter efficiency by 1-2 percentage points. Pair it with a digital isolator and a dedicated SR controller such as the IR2086S or Infineon XDPE132G5D for body-diode-free synchronous commutation. The PG-TDSON-8-7 footprint allows two parallel MOSFETs to be placed on a 10x10 mm copper pour, doubling current capability with balanced thermal sharing.
Recommended
Server CRPS / OCP Power Supply Secondary Side
In server CRPS (Common Redundant Power Supply) and OCP (Open Compute Project) 48 V-to-12 V and 12 V-to-1 V converter modules, the BSC040N08NS5ATMA1 serves as the high-current synchronous rectifier FET in the secondary-side buck stage. Its 80 V VDS rating easily handles 12 V nominal with margin for transients, while the 4 mOhm on-resistance keeps conduction loss below 1% of throughput power at full 100 A load. The Kelvin-source pin 2 isolates gate-drive return from power-current return, allowing sub-10 ns clean switching essential to meeting 80 Plus Titanium efficiency targets. Infineon reference designs for 800 W and 1600 W CRPS units use this part family.
Recommended
24 V Industrial Buck Converter
The BSC040N08NS5ATMA1 fits 24 V industrial bus buck converters that step down to 12 V, 5 V, or 3.3 V rails for PLC, motor-control, and factory-automation subsystems. Its 80 V VDS rating provides 3x safety margin above the 24 V nominal rail plus transients from inductive loads, while the 4 mOhm RDS(on) keeps full-load efficiency above 96% in a 10 A continuous design. The -55 C to +175 C junction temperature range tolerates the harsh thermal environments found in unenclosed industrial cabinets. The SuperSO8 5x6 footprint is JEDEC-standard, allowing PCB layout reuse across 24 V, 36 V, and 48 V input variants within the same product family.
Recommended
Hot-Swap and OR-ing Circuit
The BSC040N08NS5ATMA1 operates as the switching element in 48 V hot-swap and OR-ing circuits used in redundant server and telecom power shelves. Its 4 mOhm RDS(on) keeps steady-state voltage drop below 200 mV at 50 A, minimizing conduction loss across the OR-ing path while preserving a fast electronic-fuse characteristic during fault conditions. The 100 A continuous drain current rating provides 2x inrush margin for hot-plug events, and the avalanche-rated body diode withstands the inductive kickback when a faulty board is removed. Pair it with a hot-swap controller such as the LM5060 or TPS2480 for programmable current limiting and fault logging.
Recommended
High-Current BLDC Motor Drive
The BSC040N08NS5ATMA1 functions as the low-side or high-side switching FET in three-phase brushless DC (BLDC) motor drives for e-bike, drone, and small-EV traction systems operating from 24 V to 48 V battery packs. Its 100 A continuous drain current rating supports peak motor currents during acceleration, and the OptiMOS 5 process provides the fast switching speeds essential to PWM frequencies above 50 kHz for low-torque-ripple operation. The PG-TDSON-8-7 footprint allows a half-bridge to be constructed from a pair of these parts on a 12x10 mm copper area, ideal for compact integrated motor controllers. For higher-power 96 V systems, choose the 150 V BSC093N15NS5ATMA1 instead.
Recommended
Battery Management System (BMS) Discharge Path
In lithium-ion battery management systems, the BSC040N08NS5ATMA1 serves as the high-current discharge-path MOSFET that isolates the battery pack from the load during fault or storage conditions. Its 4 mOhm RDS(on) keeps voltage drop below 100 mV at 25 A continuous discharge, preserving usable battery capacity, while the 100 A peak rating handles motor inrush and inverter surge currents. The OptiMOS 5 process provides excellent avalanche robustness, critical for absorbing back-EMF from inductive loads when the FET turns off abruptly. For 48 V e-scooter and 72 V light-EV battery packs, choose the 100 V BSC040N10NS5ATMA1 variant for additional VDS margin.
Recommended
Recommended Products Summary
Engineering reference data for BSC040N08NS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC040N10NS5ATMA1 | BSC052N08NS5ATMA1 | BSZ110N08NS5ATMA1 | BSC093N15NS5ATMA1 | BSC0902NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same | TSDSON-8 - smaller | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same |
| VDS max | 80 V | 100 V | 80 V | 80 V | 150 V | 80 V |
| RDS(on) max @ VGS=10V | 4 mOhm | 4 mOhm | 5.2 mOhm | 11 mOhm | 9.3 mOhm | 9 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Primary Application | Synchronous rectification | Synchronous rectification | Synchronous rectification | Synchronous rectification | Synchronous rectification | Synchronous rectification |
Key Differentiators
- Lowest RDS(on) in the 80 V OptiMOS 5 SuperSO8 family (vs BSC052N08NS5ATMA1 (5.2 mOhm))
- 80 V rating optimized for 48 V synchronous rectification (vs BSC040N10NS5ATMA1 (100 V))
- PG-TDSON-8-7 footprint enables higher continuous current than TSDSON-8 alternatives (vs BSZ110N08NS5ATMA1 (TSDSON-8))
Design Notes
The PG-TDSON-8-7 package provides a Kelvin source on pin 2 specifically to isolate gate-drive return current from power-current return. Route the gate-driver ground return directly to pin 2, not to pin 1 or 3, and keep the gate-drive loop area (gate-driver output to gate to pin 2 back to driver ground) under 0.5 cm² to minimize parasitic inductance. Use a 10-22 ohm gate resistor in series with the driver output to dampen ringing without sacrificing switching speed.
Estimated: at 50 A continuous drain current and RDS(on) of 4 mOhm (rising to ~6 mOhm at 125 C junction), conduction loss reaches approximately 15 W. On a 1 in² FR4 copper pour (theta_JA ≈ 50 C/W), junction temperature would rise 750 C above ambient - clearly impossible - so 50 A continuous requires either active cooling or substantial copper thermal mass. For 104 W dissipation, direct case cooling via heatsink mounting is required; do not rely on PCB-only dissipation for continuous high-current operation.
Do not connect the gate-driver return to pin 1 or pin 3 instead of pin 2 - the package inductance shared between power and gate loops will cause severe gate ringing and possible avalanche failure. Do not exceed VGS of +/-20 V (verify exact rating in datasheet); use a 12 V or 10 V gate drive for best efficiency. Always provide a TVS or snubber across drain-source if switching inductive loads, even though OptiMOS 5 is avalanche-rated.
Use a 4-layer PCB with at least 2 oz copper on top and bottom layers for the drain tab connection. Thermal vias under the exposed pad (0.3 mm diameter, 1 mm pitch, filled with solder or thermal epoxy) reduce junction-to-ambient thermal resistance by 30-40%. Keep the gate-drive traces short and away from drain switching nodes to prevent capacitive injection; route the gate on an inner layer if necessary with a ground shield above and below.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is a commercial/industrial grade part. For automotive applications, consult Infineon automotive-grade MOSFET portfolio.
