BSC028N06NSTATMA1 vs IPB020N08N5ATMA1 Comparison
Detailed side-by-side comparison of BSC028N06NSTATMA1 by Infineon and IPB020N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC028N06NSTATMA1
BSC028N06NSTATMA1 - 60V 2.8mΞ© N-Ch OptiMOS 5 MOSFET | Infineon
BSC028N06NSTATMA1 β Active
Specification Comparison
| Parameter | BSC028N06NSTATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.40 | $1.45 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | β |
| Part Number Base | BSC028N06NS | β |
| Technology | MOSFET N-Channel (OptiMOS 5) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | β |
| Total Gate Charge Qg | 37 nC @ VGS=10V | β |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | β |
| Output Capacitance Coss | 825 pF | β |
| Reverse Transfer Capacitance Crss | 56 pF | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 100 W | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-TO263-3 (D2PAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | β |
| Continuous Drain Current (ID) at Tc=25C | β | 120 A |
| Pulsed Drain Current (IDM) | β | 480 A |
| Maximum RDS(on) at VGS=10V | β | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at Tc=25C | β | 300 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | β | [DATA_NEEDED: EAS value] |
| Configuration | β | Single N-channel, 3-pin (2+Tab) |