BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon
MPN: BSC028N06NSTATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.82 | $8.20 |
| 100 | $0.68 | $68.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.47 | $470.00 |
| 3,000 | $0.4 | $1,200.00 |
BSC028N06NSTATMA1 Overview
What is an N-channel power MOSFET? A metal-oxide-semiconductor field-effect transistor (MOSFET) is a voltage-controlled switch used to switch or amplify signals in electronic circuits. An N-channel MOSFET conducts current between drain and source when a positive gate-source voltage exceeds Vth; for power conversion, the key figure of merit is RDS(on) × Qg (lower = lower conduction AND switching loss). Infineon's OptiMOS 5 is a 60 V-300 V platform that reduces both figures by ~30-50% versus prior OptiMOS generations, sitting in the broader hierarchy: power MOSFET -> discrete semiconductor -> power management.
Key specifications include a 60 V drain-source breakdown voltage, 2.8 mΩ maximum RDS(on) at VGS=10 V, gate threshold voltage typically 2.5-3.5 V, total gate charge of approximately 37 nC, and an operating junction temperature range of -55°C to +175°C. The PG-TDSON-8-7 (5x6 mm SuperSO8) package uses an exposed drain pad for direct PCB heat-sinking with a thermal resistance that supports 100 W when mounted on a 1 in² copper pad.
The OptiMOS 5 cell architecture uses a shielded-gate trench design with a low-resistance substrate, achieving the 2.8 mΩ on-state figure in a footprint less than 30 mm². This combination of low RDS(on), moderate gate charge, and small package makes the part suitable for high-frequency synchronous rectification in switch-mode power supplies (SMPS) where both conduction and switching loss matter.
Typical applications include synchronous rectification in server, desktop and tablet charger SMPS, DC-DC converter high-side and low-side switches, motor drive H-bridges (12-48 V systems), battery management OR-ing and protection, and eMobility / 48 V mild-hybrid power distribution. The 60 V rating provides comfortable headroom for 24 V industrial and 36-48 V eMobility buses.
When designing with this MOSFET, prioritize minimizing source-inductance by short, wide source/return paths on the PCB and by using the source-pad down configuration. Drive the gate with a 4-10 V gate-drive voltage; the part's 2.5-3.5 V threshold means standard 5 V logic-level drives work for low-frequency switching, but 10 V is recommended for full RDS(on) and lowest loss.
This page synthesizes distributor pricing, parametric drop-in alternatives, application notes, and PCB-layout guidance not found in the manufacturer datasheet alone, giving procurement and design engineers a single source for evaluating the BSC028N06NSTATMA1.
Drop-in alternatives for BSC028N06NSTATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC028N06NSTATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC034N06NSATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →BSC016N06NSATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →BSC040N06NS
✅ Drop-In📋 Reference alternative (not in catalog)
BSC097N06NSATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →VBGQA1602
✅ Drop-In📋 Reference alternative (not in catalog)
BSC028N06NSTATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Part Number Base | BSC028N06NS |
| Technology | MOSFET N-Channel (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TA=25C | 24 A |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V |
| Total Gate Charge Qg | 37 nC @ VGS=10V |
| Output Capacitance Coss | 825 pF |
| Reverse Transfer Capacitance Crss | 56 pF |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 100 W |
| Operating Junction Temperature | -55C to +175C |
| Package | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
| MSL Level | 1 |
BSC028N06NSTATMA1 Pin Configuration
| Pin 1 | Source — Source connection (Kelvin-sensed) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain (connected to exposed pad) |
| Pin 6 | Drain — Drain (connected to exposed pad) |
| Pin 7 | Drain — Drain (connected to exposed pad) |
| Pin 8 | Drain — Drain (connected to exposed pad) |
Safe Operating Area (DC, TC=25C)
Typical Applications
BSC028N06NSTATMA1 is suitable for 6 applications: Synchronous Rectification in SMPS, 48V Mild-Hybrid eMobility Power Distribution, Industrial 24V Buck / Boost DC-DC Converters, Battery Management / OR-ing Protection, Motor Drive H-Bridge (12-48V), USB-PD / High-Current Charger Output Stage.
Synchronous Rectification in SMPS
The BSC028N06NSTATMA1 is widely used as the low-side synchronous rectifier in switched-mode power supplies for servers, desktops, and tablet chargers. The 2.8 mΩ RDS(on) at 10 V VGS keeps conduction losses below 1 W at 20 A load, while the 37 nC total gate charge enables switching frequencies up to 500 kHz. The PG-TDSON-8-7 exposed-drain pad provides thermal relief on standard 1-2 oz copper PCB layouts. Designers should pair the part with a high-side BSC016N06NSATMA1 for the best efficiency in 48 V-to-12 V buck stages serving AI server rails.
Recommended
48V Mild-Hybrid eMobility Power Distribution
The 60 V VDS rating of the BSC028N06NSTATMA1 makes it ideal for 48 V mild-hybrid automotive power buses, where transients can spike to 60 V during load-dump events. The 2.8 mΩ RDS(on) supports continuous currents of 24 A on PCB-mounted designs typical of eMobility DC-DC converters. The OptiMOS 5 cell architecture tolerates the high junction temperatures (up to +175°C) seen in under-hood environments. For AEC-Q101-qualified automotive variants, engineers should verify the part suffix against Infineon's automotive OptiMOS 5 datasheet.
Recommended
Industrial 24V Buck / Boost DC-DC Converters
The BSC028N06NSTATMA1 fits 24 V industrial bus buck and boost converters where the 60 V VDS provides 2.5x safety margin over nominal rail voltage. The 2.8 mΩ RDS(on) supports 10-20 A continuous loads in industrial PLC, motor drive, and factory-automation systems. The PG-TDSON-8-7 5x6 mm footprint enables compact designs on 4-layer FR-4 with standard 1 oz copper. Pairing this part with the EiceDRIVER 2EDN7524GXTMA1 gate driver gives sub-30 ns propagation delays for high-frequency operation.
Recommended
Battery Management / OR-ing Protection
In battery management systems (BMS) and OR-ing protection circuits, the BSC028N06NSTATMA1 serves as the low-loss pass element. The 60 V VDS handles multi-cell lithium battery stacks up to 13S (54.6 V fully charged). The 2.8 mΩ RDS(on) minimizes voltage drop across the protection MOSFET, extending battery run-time. The -55°C to +175°C junction temperature range supports outdoor energy-storage and e-bike applications. Source pins 1-3 should be Kelvin-connected to the controller's current-sense amplifier for accurate coulomb counting.
Recommended
Motor Drive H-Bridge (12-48V)
The BSC028N06NSTATMA1 is well-suited as the low-side and high-side switches in H-bridge motor drives for 12 V, 24 V, and 48 V brushless DC motors. The 2.8 mΩ RDS(on) keeps I²R losses below 700 mW per FET at 10 A, reducing heatsinking requirements. The 60 V VDS handles back-EMF spikes typical of motor commutation. The PG-TDSON-8-7 footprint allows compact integration with the IRS2181STRPBF or IRS2104STRPBF half-bridge gate driver on the same PCB layer.
Recommended
USB-PD / High-Current Charger Output Stage
In 100 W+ USB-PD chargers and laptop adapters, the BSC028N06NSTATMA1 serves as the synchronous rectifier on the secondary side of the flyback or as the low-side switch in active-clamp forward topologies. The 2.8 mΩ RDS(on) minimizes conduction loss at 5 A / 20 V output, while the small 5x6 mm footprint keeps the BOM dense. The OptiMOS 5 platform's low Qrr (reverse-recovery charge) reduces dead-time loss in zero-voltage-switching (ZVS) topologies preferred for ultra-thin laptop adapters.
Recommended
Recommended Products Summary
Engineering reference data for BSC028N06NSTATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC034N06NSATMA1 | BSC016N06NSATMA1 | BSC040N06NS | BSC097N06NSATMA1 | VBGQA1602 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi |
| Package | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-7 (5x6 mm) - same | PG-TDSON-8-7 (5x6 mm) - same | PG-TDSON-8-7 (5x6 mm) - same | PG-TDSON-8-7 (5x6 mm) - same | DFN8 (5x6) - same footprint |
| Drain-Source Voltage VDS max | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | Shielded-gate trench (VBsemi) |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest RDS(on) in 60 V OptiMOS 5 family at 2.8 mΩ (vs BSC034N06NSATMA1)
- Significantly lower conduction loss than cost-optimized variant (vs BSC097N06NSATMA1)
- Cross-brand pin-compatible supply-chain alternative (vs VBGQA1602 (VBsemi))
Design Notes
Estimated: at 24 A continuous drain current with TA=25°C and the PG-TDSON-8-7 mounted on the minimum recommended 1 in² (645 mm²) of 1 oz copper, junction temperature rise is approximately ΔT = P × θJA = 24² × 0.0028 × 50 = 81°C, putting TJ at ~106°C. For continuous 24 A operation, increase copper area to ≥2 in² or add airflow. The 100 W rating applies only with case-temperature-controlled mounting (TC=25°C), which is not achievable in most PCB designs.
Layout is critical for low-loss switching. Use a 4-layer PCB with a dedicated ground plane directly under the PG-TDSON-8-7 exposed pad. Connect source pins 1-3 with a Kelvin return path to the gate-driver ground - this decouples the high-current source path from the gate-drive loop and prevents gate-oscillation. The exposed drain pad (pins 5-8) must have at least 8 thermal vias (0.3 mm drill) to the bottom copper plane to achieve rated thermal performance.
Do not drive the gate with voltages above the absolute maximum VGS of ±20 V, even transiently. For 12 V gate drives, add a 10 kΩ gate-source resistor to ensure the part stays off if the gate driver loses power. The PG-TDSON-8-7 footprint is NOT pin-compatible with the smaller PG-TSDSON-8 (3x3 mm) - verify mechanical drawings before substituting. Source pins 1, 2, and 3 must all be soldered; missing source pin bonds will exceed current rating.
Minimize the high-side gate-drive loop area: keep the bootstrap capacitor within 2 mm of the high-side driver's BST and SW pins, and the gate drive trace to the MOSFET gate ≤10 mm total length. For synchronous rectification in totem-pole or half-bridge topologies, route the low-side gate trace on the opposite PCB layer from the high-current switching node to minimize dv/dt-induced turn-on of the low-side FET (Miller effect).
Compliance Information
AEC-Q101 automotive qualification status not confirmed from provided data - check Infineon OptiMOS 5 60 V automotive datasheet. RoHS and REACH compliance per Infineon product page. Halogen-free per JLCPCB and LCSC listing.
